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The Generation and Optical Activity of Misfit Dislocations by Very Low Level Transition Metal Contamination of SiGe/Si.

Published online by Cambridge University Press:  22 February 2011

Philip Kightley ,
Victor Higgs  and
Peter J Goodhew
Philip Kightley
Affiliation:
Department of Materials Science and Engineering, University of Liverpool, PO Box 147, Liverpool, England, L69 3BX.
Victor Higgs
Affiliation:
Department of Physics, Kings College London, London WC2R 2LS.
Peter J Goodhew
Affiliation:
Department of Materials Science and Engineering, University of Liverpool, PO Box 147, Liverpool, England, L69 3BX.
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Abstract

An initially pseudomorphic Sio.93Geo.07 layer is forced to relax after the deposition of 0.003 monolayers of Cu contamination and a 600°C anneal. Photoluminescence shows the dislocations have similar luminescence features (D1 to D4) to dislocations generated in bulk silicon. TEM is used to study the generation of the misfit dislocations. It is shown that the half loops form at the sample surface and a mechanism that involves the action of both the metal contaminant and the surface steps is suggested to explain the geometric arrangement of the dislocation loops that are present. The sample was found to be only 22% relaxed whereas equilibrium theory predicts 92% relaxation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 239: Symposium D – Thin Films: Stresses and Mechanical Properties III , 1991 , 401
Copyright
Copyright © Materials Research Society 1992

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References

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