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A Generalized Model of the Yield Drop for Impure Semiconductors

Published online by Cambridge University Press:  14 March 2011

Boris V. Petukhov
Boris V. Petukhov*
Affiliation:
Institute of Crystallography, Russian Academy of Sciences, Leninskii pr. 59, Moscow, 117333, Russia
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Abstract

The Alexander-Haasen theory describing the deformation behavior of low-dislocated semiconductor crystals is generalized taking into account the dynamic ageing of dislocations due to the impurities dragging. The constitutive equations describing kinetics of the plastic deformation are modified for the case of a spectrum of age-dependent internal stresses. Besides the solution hardening, the theory developed explains a number of qualitative distinctions of the elastic-plastic transition in silicon crystals grown by the Czochralski and the float zone methods. Particularly, this concerns a dependence of the yield drop on the initial dislocation density, and a weakening of the strain rate sensitivity of the yield stress.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 683: Symposium BB – Materials Instabilities and Patterning in Metals , 2001 , BB3.3.1
Copyright
Copyright © Materials Research Society 2001

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References

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