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Ge Segregation and Surface Roughening During Si Growth on Ge(001)2×l by Gas-Source Molecular Beam Epitaxy from Si2H6

Published online by Cambridge University Press:  25 February 2011

R. Tsu ,
D.-S. Lin ,
J. E. Greene  and
T.-C. Chiang
R. Tsu
Affiliation:
Dept. of Materials Science, University of Illinois, Urbana, IL 61801.
D.-S. Lin
Affiliation:
Dept. of Physics, University of Illinois, Urbana, IL 61801.
J. E. Greene
Affiliation:
Dept. of Materials Science, University of Illinois, Urbana, IL 61801.
T.-C. Chiang
Affiliation:
Dept. of Physics, University of Illinois, Urbana, IL 61801.
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Abstract

Surface morphological and compositional evolution during the initial stages of Si growth on Ge(001)2×1 by cyclic gas-source molecular-beam epitaxy (GSMBE) from Si2H6 has been investigated using in-situ reflection high-energy electron diffraction (RHEED), Auger electron spectroscopy (AES), electron energy-loss spectroscopy (EELS), and scanning tunneling microscopy (STM). At 550 °C, single-step-height island growth was observed for nominal Si deposition thicknesses tsi up to ≃ 1.5 ML. The islands were essentially pure Ge which segregated to the surface as H was desorbed. At higher tsi, the Ge coverage decreased, the surface roughened, and two-dimensional multi-layer island growth was observed for tSi up to ≃8 ML above which three-dimensional island growth was obtained. For thick layers (t S: 75 ML), no Ge was detected at the surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 280: Symposium B – Evolution of Surface and Thin Film Microstructure , 1992 , 281
Copyright
Copyright © Materials Research Society 1993

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References

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