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Ge δ-Layers on Si(111) and Si(001) Grown by MBE and SPE

Published online by Cambridge University Press:  15 February 2011

J. Falta ,
T. Gog ,
G. Materlik ,
B. H. Müjller  and
M. Horn-Von Hoegen
J. Falta
Affiliation:
Hamburger Synchrotronstrahlungslabor HASYLAB am Deutschen Elektronen-Synchrotron DESY, Notkestr. 85, 22603 Hamburg, Germany
T. Gog
Affiliation:
Hamburger Synchrotronstrahlungslabor HASYLAB am Deutschen Elektronen-Synchrotron DESY, Notkestr. 85, 22603 Hamburg, Germany
G. Materlik
Affiliation:
Hamburger Synchrotronstrahlungslabor HASYLAB am Deutschen Elektronen-Synchrotron DESY, Notkestr. 85, 22603 Hamburg, Germany
B. H. Müjller
Affiliation:
Institut für Festkörperphysik, Universität Hannover, Appelstr. 2, 30167 Hannover, Germany
M. Horn-Von Hoegen
Affiliation:
Institut für Festkörperphysik, Universität Hannover, Appelstr. 2, 30167 Hannover, Germany
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Abstract

Ge δ-layers on Si(111) and Si(001), grown by molecular beam epitaxy (MBE) and solid phase epitaxy (SPE) were characterized in-situ by high-resolution low-energy electrondiffraction and post-growth by x-ray standing waves. LEED intensity oscillations are used to determine the growth mode of Ge on Si which is found to proceed in a double bilayer fashion for Ge on Si(111). X-ray standing waves are employed to investigate crystal quality of the Ge layer. SPE on Si(111) requires high annealing temperatures (600°C) for sufficient recrystallization of defects in the Ge δ-layer. On Si(001), Ge δ-layers of surprisingly high crystalline quality are grown by solid phase epitaxy at room temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 375: Symposia AA – Applications of Synchrotron Radiation Techniques to Materials Science , 1994 , 177
Copyright
Copyright © Materials Research Society 1995

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