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Ga-vacancy activation under low energy electron irradiation in GaN-based materials

Published online by Cambridge University Press:  13 April 2012

Henri Nykänen ,
Sami Suihkonen ,
Lucasz Kilanski ,
Markku Sopanen  and
Filip Tuomisto
Henri Nykänen
Affiliation:
Department of Micro- and Nanosciences, Aalto University, P.O. Box 13500, FI-00076 Aalto, Finland
Sami Suihkonen
Affiliation:
Department of Micro- and Nanosciences, Aalto University, P.O. Box 13500, FI-00076 Aalto, Finland
Lucasz Kilanski
Affiliation:
Department of Applied Physics, Aalto University, P.O. Box 11100, FI-00076 Aalto, Finland Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/65, 02-668 Warsaw, Poland
Markku Sopanen
Affiliation:
Department of Micro- and Nanosciences, Aalto University, P.O. Box 13500, FI-00076 Aalto, Finland
Filip Tuomisto
Affiliation:
Department of Applied Physics, Aalto University, P.O. Box 11100, FI-00076 Aalto, Finland
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Abstract

We present results on optical degradation of gallium nitride based materials under low energy electron beam irradiation (LEEBI). GaN thin film and GaN/InGaN quantum well samples, grown by metal-organic vapor phase epitaxy (MOVPE), were exposed to a tightly focused (ø = 2 nm, J = 0-130 kA/cm2), rapidly scanning electron beam (e-beam) with energy of 5-20 keV and dose of 0-500 μC/cm2. The irradiation severely reduced the band-to-band photoluminescence of the exposed sample areas. Performing positron annihilation spectroscopy measurements on the irradiated films revealed an important increase of Ga-vacancy concentration as a function of the irradiation dose. Based on the measurements we propose that in-grown passive VGa-Hn complexes are present in MOVPE grown GaN (and its alloys), and are activated by LEEBI.

Keywords

electron irradiationIII-Vscanning electron microscopy (SEM)
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1432: Symposium G – “Reliability and Materials Issues of III-V and II-VI Semiconductor Optical and Electron Devices and Materials II” , 2012 , mrss12-1432-g05-05-ii06-05
Copyright
Copyright © Materials Research Society 2012

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References

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