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Gate Dielectric Dependent on Pentacene Growth and Electrical Stability in OTFTs

Published online by Cambridge University Press:  26 February 2011

Kim Chang Su ,
Jo Sung Jin ,
Lee Sung Won  and
Baik Hong Koo
Kim Chang Su
Affiliation:
[email protected], Yonsei University, Materials Science and Technology, Seodaemungu Shinchondong 134, Seoul, 120-749, Korea, Republic of, 82-2-2123-2838, 82-2-312-5375
Jo Sung Jin
Affiliation:
[email protected], Yonsei University, Materials Science and Technology, Seodaemungu Shinchondong 134, Seoul, 120-749, Korea, Republic of
Lee Sung Won
Affiliation:
[email protected], Yonsei University, Materials Science and Technology, Seodaemungu Shinchondong 134, Seoul, 120-749, Korea, Republic of
Baik Hong Koo
Affiliation:
[email protected], Yonsei University, Materials Science and Technology, Seodaemungu Shinchondong 134, Seoul, 120-749, Korea, Republic of
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Abstract

We report on the effects of modifying the gate dielectrics by spin coating of HMDS, PVP and PVA which cause different surface energy and surface roughness owing to the different functional groups. In changing the surface state with applying various surface treatments, I-V and C-V measurements of the OTFTs were performed. The PVP-coated OTFTs, which has smoother and lesser amount of OH-groups on the gate dielectric surface, showed enhanced pentacene growth and nearly free hysteresis behavior than that of the HMDS and PVA-coated OTFTs.

Keywords

dielectric propertiesmicroelectronicsthin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 965: Symposium S – Organic Electronics – Materials, Devices and Applications , 2006 , 0965-S06-35
Copyright
Copyright © Materials Research Society 2007

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