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Gas-Surface Reaction Studies Relevant to SiC Chemical Vapor Deposition

Published online by Cambridge University Press:  25 February 2011

C. D. Stinespring ,
A. Freedman  and
J. C. Wormhoudt
C. D. Stinespring
Affiliation:
Center for Chemical and Environmental Physics, Aerodyne Research, Inc., 45 Manning Road, Billerica, MA 01821
A. Freedman
Affiliation:
Center for Chemical and Environmental Physics, Aerodyne Research, Inc., 45 Manning Road, Billerica, MA 01821
J. C. Wormhoudt
Affiliation:
Center for Chemical and Environmental Physics, Aerodyne Research, Inc., 45 Manning Road, Billerica, MA 01821
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Abstract

Reactions of C2H4, C3H8, and CH4 on Si(111) and C2H4 on Si(100) have been investigated for surface temperatures in the range of 1062 K to 1495 K. These studies used x-ray photoelectron spectroscopy to identify the reaction products, characterize the solid state transport process, determine the nucleation mechanism and growth kinetics, and assess orienta-tion effects. The results are used to provide insight into the mechanisms of SiC CVD processes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 131: Symposium E – Chemical Perspectives of Microelectronic Materials I , 1988 , 227
Copyright
Copyright © Materials Research Society 1989

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References

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