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Gas-Source Molecular Beam Epitaxy Growth and Characterization of GaNP/GaP Structures

Published online by Cambridge University Press:  10 February 2011

H. P. Xin  and
C. W. Tu
H. P. Xin
Affiliation:
Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, CA 92093-0407
C. W. Tu
Affiliation:
Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, CA 92093-0407
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Abstract

GaNP bulk layers with different N concentrations and GaN0.025P0.975/GaP multiple quantum wells (MQWs) with various well thicknesses were grown on (100) GaP substrates by gas-source molecular beam epitaxy with a RF nitrogen radical beam source. Using high-resolution X-ray rocking curves, photoluminescence (PL) and absorption measurements, we have shown that incorporation of N in GaNxP1−x, alloys (x ≥0.43%) leads to a direct bandgap behavior of GaNP, and yields strong room-temperature PL from the epilayers. A large Stokes shift of 200 meV is found between the PL peak energy and the absorption edge for the GaNP epilayers, indicating a very strong carrier localization. From the PL peaks of a series of GaN0.025P0.975/GaP MQWs with different well thicknesses grown at the same growth condition, a large conduction-band effective mass mc* − 0.9 me has been obtained for the GaN0.025P0.975alloy, indicating a mixing of Γ and X band wave functions in the conduction band

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 618: Symposium K – Morphological & Compositional Evolution of Heteroepitaxial… , 2000 , 279
Copyright
Copyright © Materials Research Society 2000

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References

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