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GaSb-based Materials for Mid-infrared Photodiodes Operating in the 0.9–2.55 μm Spectral Range

Published online by Cambridge University Press:  11 February 2011

I.A. Andreev ,
E.V. Kunitsyna ,
M.P. Mikhailova ,
Yu.P. Yakovlev  and
A.F. Ioffe
I.A. Andreev
Affiliation:
Physico-Technical Institute RAS, 194021, St.-Petersburg, Russia
E.V. Kunitsyna
Affiliation:
Physico-Technical Institute RAS, 194021, St.-Petersburg, Russia
M.P. Mikhailova
Affiliation:
Physico-Technical Institute RAS, 194021, St.-Petersburg, Russia
Yu.P. Yakovlev
Affiliation:
Physico-Technical Institute RAS, 194021, St.-Petersburg, Russia
A.F. Ioffe
Affiliation:
Physico-Technical Institute RAS, 194021, St.-Petersburg, Russia
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Abstract

The paper discusses some recent developments in the GaSb/GaInAsSb/GaAlAsSb heterostructure epitaxial growth and fabrication of GaInAsSb/GaAlAsSb photodiodes for the 0.9–2.55 μm spectral range.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 744: Symposium M – Progress in Semiconductors II–Electronic and Optoelectronic Applications , 2002 , M9.4
Copyright
Copyright © Materials Research Society 2003

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References

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