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Gas Stream Analysis and PFC Recovery in A Semiconductor Process

Published online by Cambridge University Press:  10 February 2011

J.A.B. van Hoeymissen
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
M. Daniels
Affiliation:
Texas Instruments industrial resident at IMEC
N. Anderson
Affiliation:
BOC industrial resident at IMEC
W. Fyen
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
M. Heyns
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
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Abstract

The performance of pressure swing adsorption (PSA) technology was assessed for recovering PFCs from the exhaust of a semiconductor plasma process. Several PSA process conditions were run to determine an optimized system. Under well defined conditions, the PSA technique was found to be effective at separating C2F6 from nitrogen, although the balance between recovery and product purity was evident. The exhaust of a plasma chamber was analysed by mass spectrometers and plasma etching conditions were varied to determine the effects on the PSA performance. A gas reactor column (GRC) was tested as pre‐treatment of the capturing system

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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References

1 SEMATECH Topical Workshop Proceedings on Economic and Technical Issues in Optimizing Plasma Processes to Minimize Environment, Safety and Health Impacts, Austin, TX, July 1996.Google Scholar
2 Ruthven, D. M., Farooq, S. and Knaebel, K. S., Pressure Swing Adsorption. VCH Publishers Inc., New Tork, 1994.Google Scholar