Hostname: page-component-78c5997874-ndw9j Total loading time: 0 Render date: 2024-11-04T22:00:08.176Z Has data issue: false hasContentIssue false

Gas Cluster Ge Infusion for Si(1−x)Ge(x)Strained-Layer Applications

Published online by Cambridge University Press:  01 February 2011

Thomas G. Tetreault
Affiliation:
[email protected], Epion Corporation, Surface Chemistry, 37 Manning Road, Billerica, MA, 01821, United States, 978-670-1910, 978-670-9119
Yan Shao
Affiliation:
[email protected], Epion Corporation, 37 Manning Road, Billerica, MA, 01821, United States
Mengbing Huang
Affiliation:
[email protected], College of Nanoscale Science and Engineering, Albany, NY, 12222, United States
John Hautala
Affiliation:
[email protected], Epion Corporation, 37 Manning Road, Billerica, MA, 01821, United States
Get access

Abstract

Materials processing with a gas cluster ion beam (GCIB) is an emerging technology that has been shown to produce novel material properties in the very near-surface (<40nm) regime. We have termed the process of doping with GCIB, infusion. Its principal characteristic enables room temperature shallow processing with high concentration gradients and no sharp interfaces. Results are presented from an investigation of GCIB GeH4 infusion into Si(100) substrates for the purpose of producing a strained Si(1-x)Ge(x) layer relative to the Si substrate. The as-infused samples exhibit surface Ge concentrations up to 100%, with a steep concentration gradient over ∼40 nm. Specifically, a broad series of post-processing tube-furnace anneals was investigated over a temperature range of 400 °C to 1200 °C and the samples were analyzed by channeling/RBS to look at quality of recrystallization and for evidence of strain in the lattice. Some anneal schedules included a VLTA (very low temperature anneal) first step followed by subsequent HTA (high temperature anneal). Evidence is shown for improved results with no Ge loss using two-step anneals. Channeling analysis was performed along the <100> and <110> directions relative to the Si(100) substrate. Measurements of the min for both the Ge and Si were made to assess crystal quality and to determine the degree of epitaxial alignment with the Si lattice. High-resolution axial scans along <110> were performed on selected samples to look for strain relative to the Si lattice. SIMS analysis of higher temperature anneals showed significant diffusion of Ge. Some samples were also examined by cross-sectional TEM. The best infusion samples show crystal quality comparable to a commercially available epi-grown Si75Ge25 control sample.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Toyoda, N., Hagiwara, N., et al, Nucl. Instr. Meth. B. 161–163, 980 (2000).Google Scholar
2. White, B., Book, G., et al, “Ultra Low-k Integration Solutions Using GCIB Processing”, IIT Conference, IEEE, (June 2004).Google Scholar
3. Eggs, C., Schmidhammer, E., Schaufele, A., Workshop on Cluster Ion Beam Technology, (Nov. 2006) Tokyo.Google Scholar
4. Hautala, J., Gwinn, M., Skinner, W., Shao, Y., “Productivity Enhancements for Shallow Junctions and DRAM Applications Using Infusion Doping”.Google Scholar
5. Kondo, S., et al, “Infusion Processing for Reliable Copper Interconnects”, AMC Conf. (2006).Google Scholar
6. Yamada, I., et al, Materials Science and Engineering Reports, 34 (6), 231295 (2001).Google Scholar
7. Armigliato, A., Govoni, D., et al, Mikrochim. Acta,Google Scholar
8. Timbrell, P. Y., Baribeau, J.-M., et al, J. Appl. Phys. 67, 6292, (1990).Google Scholar
9. Chu, W-K., Mayer, J. W., Nicolet, M-A, “Use of Channeling Techniques,” Backscattering Spectrometry, (Academic Press, 1978) pp.223275.Google Scholar
10. Chu, W-K., Pan, C. K., and Chang, C.-A., Phys. Rev. B 28, 4033 (1983).Google Scholar
11. Robinson, B. J., Thompson, D. A., Yang, Y., et al, Vacuum 39, 133 (1989).Google Scholar
12. Chilton, B. T., Jackman, T. E., et al, Appl. Phys. Lett. 54, (1), 2 January 1989 Google Scholar