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The Ga-Nitride/air Two-Dimensional Photonic Quasi-crystals Fabricated on GaN-based Light Emitters

Published online by Cambridge University Press:  01 February 2011

Bei Zhang ,
ZhenSheng Zhang ,
Jun Xu ,
Qi Wang ,
ZhiJian Yang ,
WeiHua Chen ,
XiaoDong Hu ,
ZhiXin Qin ,
GuoYi Zhang  and
DaPeng Yu
Bei Zhang
Affiliation:
School of Physics, Peking University, and State Key Laboratory for Mesoscopic Physics, Beijing 100871, CHINA
ZhenSheng Zhang
Affiliation:
School of Physics, Peking University, and State Key Laboratory for Mesoscopic Physics, Beijing 100871, CHINA
Jun Xu
Affiliation:
School of Physics, Peking University, and State Key Laboratory for Mesoscopic Physics, Beijing 100871, CHINA
Qi Wang
Affiliation:
School of Physics, Peking University, and State Key Laboratory for Mesoscopic Physics, Beijing 100871, CHINA
ZhiJian Yang
Affiliation:
School of Physics, Peking University, and State Key Laboratory for Mesoscopic Physics, Beijing 100871, CHINA
WeiHua Chen
Affiliation:
School of Physics, Peking University, and State Key Laboratory for Mesoscopic Physics, Beijing 100871, CHINA
XiaoDong Hu
Affiliation:
School of Physics, Peking University, and State Key Laboratory for Mesoscopic Physics, Beijing 100871, CHINA
ZhiXin Qin
Affiliation:
School of Physics, Peking University, and State Key Laboratory for Mesoscopic Physics, Beijing 100871, CHINA
GuoYi Zhang
Affiliation:
School of Physics, Peking University, and State Key Laboratory for Mesoscopic Physics, Beijing 100871, CHINA
DaPeng Yu
Affiliation:
School of Physics, Peking University, and State Key Laboratory for Mesoscopic Physics, Beijing 100871, CHINA
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Abstract

The two-dimensional (2D) Ga-nitride/air photonic quasi-crystals (PQC) were successfully fabricated by the technique of focused Ga ion beam (FIB) milling on GaN based epitaxial wafers. The effects of the PQC on the current injected edge emitting GaN-based light emitters were investigated. The quasi-crystal structures studied in this work are based on square-triangular tiling with 8-fold or 12-fold symmetry. The air hole diameter in the different PQC patterns was varied from 95nm up to 1200nm, the filling factor of air hole was in the range of 10% to 50% and the depth of the hole was 90nm to 370nm, respectively. Among these, the nearest center-to-center distance of the holes and/or the lattice constant was reached to be 170nm. The photonic quasi-crystals on the GaN-based light emitters demonstrated a two to three factor of magnitude enhancement of surface extractive emission. The blocking of the propagation of planar-guided modes by the photonic quasi-crystals was observed. By comparison of symmetry effect among the triangular lattice PC and PQCs, it was found that the GaN-based photonic quasi-crystal (PQC) with 12-fold symmetry provided a much favorable enhancement of the extractive light emission over that of triangle lattice PC and 8-fold symmetric PQC as well.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 831: Symposium E – GaN, AlN, InN, and Their Alloys , 2004 , E7.4
Copyright
Copyright © Materials Research Society 2005

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References

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