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GaN:Eu Interrupted Growth Epitaxy (IGE): Thin Film Growth and Electroluminescent Devices

Published online by Cambridge University Press:  01 February 2011

Chanaka Munasinghe ,
Andrew Steckl ,
Ei Ei Nyein ,
Uwe Hömmerich ,
Hongying Peng ,
Henry Everitt ,
Zack Fleischman ,
Volkmar Dierolf  and
John Zavada
Chanaka Munasinghe
Affiliation:
University of Cincinnati, Cincinnati, OH 45221-0030.
Andrew Steckl
Affiliation:
University of Cincinnati, Cincinnati, OH 45221-0030.
Ei Ei Nyein
Affiliation:
Hampton University, Hampton, VA 23668.
Uwe Hömmerich
Affiliation:
Hampton University, Hampton, VA 23668.
Hongying Peng
Affiliation:
Duke University, Durham, NC 27708.
Henry Everitt
Affiliation:
Duke University, Durham, NC 27708.
Zack Fleischman
Affiliation:
Lehigh University, Bethlehem, PA 18015.
Volkmar Dierolf
Affiliation:
Lehigh University, Bethlehem, PA 18015.
John Zavada
Affiliation:
U.S. Army Research Office, Research Triangle Park, NC 27709.
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Abstract

The GaN:RE phosphor development plays a major role in the GaN:RE AC thick dielectric electroluminescent (TDEL) device optimization. In this paper we report on EL devices fabricated using Eu-doped GaN red phosphors films grown by interrupted growth epitaxy (IGE). IGE consists of a sequence of ON/OFF cycles of the Ga and Eu beams, while the N2 plasma is kept constant during the entire growth time. IGE growth of GaN:Eu resulted in significant enhancement in the Eu emission intensity based primarily at 620.5nm. The increase in the material crystallinity observed with the IGE phosphors appears to be the dominant cause of the emission enhancement. Thick dielectric EL devices fabricated on glass substrates using IGE-grown GaN:Eu have resulted in luminance of ∼1000 cd/m2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 866 , 2005 , V3.1
Copyright
Copyright © Materials Research Society 2005

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Footnotes

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E-mail: [email protected]

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