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GaN/AlxGa1−xN Wurtzite Semiconductor Superlattices

Published online by Cambridge University Press:  25 February 2011

Shang Yuan Ren  and
John D. Dow
Shang Yuan Ren
Affiliation:
Department of Physics and Astronomy, Arizona State University, Tempe, Arizona 85287–1504, U.S.A. Department of Physics, University of Science and Technology of China, Hefei 230026, People's Republic of, China
John D. Dow
Affiliation:
Department of Physics and Astronomy, Arizona State University, Tempe, Arizona 85287–1504, U.S.A.
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Abstract

A theory of electronic structures of NGaN×NAlGaN GaN/Alx Ga1−xN wurtzite semiconductor superlattices (grown in the direction of the c-axis) is developed and used to predict the superlattices' band structures, energy gaps, and the “deep” energy levels of substitutional s- and p-bonded defects in them. In addition, the valence band offset of GaN with respect to AlN, the one adjustable parameter of the theory, is determined to be about 0.4 times the total fundamental band-gap difference, by fitting the optical data for the superlattices' fundamental band gaps as a function of the layer thicknesses NGaN and NAlN, with the valence band edge of AlN being at lower energy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 775
Copyright
Copyright © Materials Research Society 1993

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References

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