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GaN Photonic-Crystal Surface-Emitting Laser

Published online by Cambridge University Press:  31 January 2011

Susumu Yoshimoto ,
Hideki Matsubara ,
Kyosuke Sakai  and
Susumu Noda
Susumu Yoshimoto
Affiliation:
[email protected], Kyoto University, Electronic Science and Engineering, Kyoto, Kyoto, Japan
Hideki Matsubara
Affiliation:
[email protected], Kyoto University, Electronic Science and Engineering, Kyoto, Kyoto, Japan
Kyosuke Sakai
Affiliation:
[email protected], Kyoto University, Pioneering Research Unit for Next Generation, Kyoto, Japan
Susumu Noda
Affiliation:
[email protected], Kyoto University, Electronic Science and Engineering, Kyoto, Japan
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Abstract

We introduce the lasing principle and important characteristics of photonic-crystal surface-emitting laser (PC-SELs). Specifically, we demonstrate two-dimensional coherent lasing oscillation with GaN PC-SELs, using a unique crystal growth technique called “air hole retained overgrowth” (AROG). Above the threshold, we obtained a two-dimensionally distributed near-field pattern, and a distinctive far-field pattern with a divergence angle less than 1°. We also investigate a suitable sample structure for the reduction of the threshold current, where the PC structure is moved from an n-cladding layer to a p-cladding one. This is an important step towards the realization of novel light sources that can be integrated two dimensionally for a variety of new scientific and engineering applications in the blue to ultraviolet wavelengths.

Keywords

lasernitridecrystal growth
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1202: Symposium I – III-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interactions , 2009 , 1202-I12-03
Copyright
Copyright © Materials Research Society 2010

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References

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