GaN Materials for High Power Microwave Amplifiers

Lester F. Eastman; Kenneth chu; Joseph smart; J. Richard Shealy

doi:10.1557/PROC-512-3

Abstract

The key parameters of GaN for use in microwave power amplifiers are presented. The electron-scattering effect of dislocations are presented for 2 DEG in HEMT devices. The use of the piezoelectric effect in designing Aly Ga1-yN/GaN HEMT structures is reviewed for a range of y.Short-gate device fabrication methods, and the device characterization, are presented. Maximum frequency of oscillation for .15 μm gates reached 140 GHz, while .3 μm gate power amplifiers reached 74% power-added efficiency at 3 GHz.

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GaN Materials for High Power Microwave Amplifiers

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This article has been cited by the following publications. This list is generated based on data provided by Crossref.

Article contents

GaN Materials for High Power Microwave Amplifiers

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