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GaN Crystals: Growth and Doping Under Pressure

Published online by Cambridge University Press:  10 February 2011

I. Grzegory ,
M. Bockowski ,
B. Lucznik ,
M. Wroblewski ,
S. Krukowski ,
J. Weyher ,
G. Nowak ,
T. Suski ,
M. Leszczynski  and
H. Teisseyre
...Show all authors
I. Grzegory
Affiliation:
High Pressure Research Center Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland, [email protected].
M. Bockowski
Affiliation:
High Pressure Research Center Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland, [email protected].
B. Lucznik
Affiliation:
High Pressure Research Center Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland, [email protected].
M. Wroblewski
Affiliation:
High Pressure Research Center Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland, [email protected].
S. Krukowski
Affiliation:
High Pressure Research Center Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland, [email protected].
J. Weyher
Affiliation:
High Pressure Research Center Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland, [email protected].
G. Nowak
Affiliation:
High Pressure Research Center Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland, [email protected].
T. Suski
Affiliation:
High Pressure Research Center Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland, [email protected].
M. Leszczynski
Affiliation:
High Pressure Research Center Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland, [email protected].
H. Teisseyre
Affiliation:
High Pressure Research Center Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland, [email protected].
T. Suski
Affiliation:
High Pressure Research Center Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland, [email protected].
E. Litwin-Staszewska
Affiliation:
High Pressure Research Center Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland, [email protected].
S. Porowski
Affiliation:
High Pressure Research Center Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland, [email protected].
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Abstract

The recent progress in high pressure crystallization of GaN is reported. The results of the growth from the solutions of atomic nitrogen in pure Ga and in its alloys with Mg, Ca and Zn are discussed. It is shown that the growth mechanisms and the physical properties of the crystals depend on the type of dopant added into the solution. In particular, high resistivity (104-106Ωcm) GaN crystals of improved structural quality can be grown from solutions containing Mg. It was also observed that the addition of Mg, Ca and Zn suppress yellow photoluminescence commonly observed in GaN crystals grown without an intentional doping. The preparation of surfaces of GaN substrates for homoepitaxy by mechanical and mechanochemical polishing is discussed. It is shown that atomically flat, thermally stable surfaces are possible to obtain by the applied procedures.

Some most interesting results concerning homoepitaxial growth by MOCVD and MBE is shortly reviewed. In particular, it is shown that perfectly matched (strain free) GaN layers can be deposited on the highly resistive GaN:Mg substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 15
Copyright
Copyright © Materials Research Society 1998

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References

[1] Porowski, S., Bockowski, M., Lucznik, B, Grzegory, I., Wroblewski, M., Teisseyre, H., Leszczynski, M., Litwin-Staszewska, E., Suski, T, Trautman, P., Pakula, K. and Baranowski, J. M., accepted for Acta Physica Polonica, 1997 Google Scholar
[2] Weyher, J. L., Müller, S., Grzegory, I. and Porowski, S., accepted for J. Cryst. Growth, 1997 Google Scholar
[3] Baranowski, J., Materials Research Society, Symposium Proceedings, Volume 449, 393 Google Scholar
[4] Pakula, K., Wysmolek, A., Korona, K. P., Baranowski, J. M., Stepniewski, R., Grzegory, I., Bockowski, M., Jun, J., Krukowski, S., Wroblewski, M.,* and Porowski, S., Solid State Comm. 97, 919, (1996)10.1016/0038-1098(95)00816-0Google Scholar
[5] Teisseyre, H., Nowak, G., Leszczyński, M., Grzegory, I., Boćkowski, M., Krukowski, S., Porowski, S., Mayer, M., Pelzmann, A., Kamp, M., Ebeling, K. J. and Karczewski, G., MRS Internet J. Nitride Semicond. Res. 1, 13 (1996)Google Scholar
[6] Langer, R., Barski, A., Leszczynski, M., Grzegory, I., Porowski, S., unpublished.Google Scholar
[7] Harrison, W. A. 1980, Electronic Structure and Properties of Solids Freeman, San Francisco, (1980).Google Scholar
[8] Karpinski., J., Jun, J. and Porowski, S., J.Cryst. Growth, 66, 1, (1984)10.1016/0022-0248(84)90070-8Google Scholar
[9] Vechten, J. A.Van, Phys. Rev. B7, 1479 (1973)10.1103/PhysRevB.7.1479Google Scholar
[10] Seelmann-Eggebert, M., Weyher, J. L., Obloh, H., Zimmermann, H., Rar, A. and Porowski, S., Appl. Phys. Lett. 71 (18) 1997 10.1063/1.120163Google Scholar
[11] Perlin, P., Camasel, J., Knap, W., Talercio, T., Chervin, J. C., Suski, T., Grzegory, I. and Porowski, S., Appl Phys Lett. 67, 2524, (1995)Google Scholar
[12] Barcz, A. and Suski, T., unpublishedGoogle Scholar
[13] Boguslawski, P., Briggs, E. and Bernholz, J., Phys. Rev. B51, 17255, (1995)10.1103/PhysRevB.51.17255Google Scholar
[14] Kim, Wook, Botchkarev, A. E., Salvador, A., Popovici, G., Tang, H. and Morkoc, H., J. Appl. Phys. 82 (1), 1997 Google Scholar
[15] Neugebauer, J. and Walle, C. G. Van de, Phys. Rev. B50, 8067, (1994)Google Scholar
[16] Saarinen, K., Laine, T., Kuisma, S., Hautojarvi, P., Dobrzyfiski, L., Baranowski, J. M., Pakula, K., Stępniewski, R., Wojdak, M., Wysmolek, A., Suski, T., Leszczyński, M., Grzegory, I. and Porowski, S., Phys. Rev Lett. 79, 3030, (1997)Google Scholar
[17] Gembicki, W., Teisseyre, H., accepted for Acta Physica Polonica, 1997 Google Scholar
[18] Saarinen, K. et al. this Conference D.4.2Google Scholar
[19] Leszczynski, M., Grzegory, I., Teisseyre, H., Suski, T., Bockowski, M., Jun, J., Baranowski, J. M., Porowski, S. and Domagala, J., J. of Cryst. Growth 169, 1996, 235–242.10.1016/S0022-0248(96)00341-7Google Scholar
[20] Liliental-Weber, Z., Ruvimov, S., Kisielowski, Ch., Chen, Y., Swider, W., Washborn, J., Newman, N., Gassmann, A., Liu, X., Schloss, L., Weber, E. R., Grzegory, I., Bockowski, M., Jun, J., Suski, T., Pakula, K., Baranowski, J., Porowski, S., Amano, H., Akasaki, I., presented on MRS Meeting, Boston 1995 Google Scholar
[21] Domagala, J., Prystawko, P., Leszczyński, M., Suski, T. and Porowski, S., unpublishedGoogle Scholar
[22] Conway, M., Williams, J. S. and Jagadish, C., private communicationGoogle Scholar
[23] Langer, R., Barski, A., Leszczynski, M., Grzegory, I., Porowski, S., unpublished.Google Scholar
[24] Pelzmann, A., Kirchner, C., Mayer, M., Schauler, M., Kamp, M., Ebeling, K. J., Grzegory, I., Leszczyński, M., Nowak, G. and Porowski, S., presented on ICNS'97, Tokushima, JapanGoogle Scholar
[25] Held, R., Seutter, S. M., Ishaug, B. E., Parhamovsky, A., Dabiran, A. M., Cohen, P. I., Palmstroem, C. J., Nowak, G., Grzegory, I. and Porowski, S., submitted to MRS Fall Meeting, Boston, 1997 Google Scholar
[26] Ponce, F. A., Bour, D. P., Young, W. T., Saunders, M. and Steeds, J. W., Appl. Phys. Lett. 69 (2), 1996.Google Scholar
[27] Ivanov, I., Henry, A., Monemar, B. and Baranowski, J. M., unpublished resultGoogle Scholar
[28] Stępniewski, R., Korona, K. P., Wysmolek, A., Baranowski, J. M., Pakula, K., Potemski, M., Martinez, G., Grzegory, I. and Porowski, S., accepted for Phys.Rev.B, December 1997.Google Scholar