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GaN Crystals: Growth and Doping Under Pressure

Published online by Cambridge University Press:  10 February 2011

I. Grzegory ,
M. Bockowski ,
B. Lucznik ,
M. Wroblewski ,
S. Krukowski ,
J. Weyher ,
G. Nowak ,
T. Suski ,
M. Leszczynski  and
H. Teisseyre
...Show all authors
I. Grzegory
Affiliation:
High Pressure Research Center Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland, [email protected].
M. Bockowski
Affiliation:
High Pressure Research Center Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland, [email protected].
B. Lucznik
Affiliation:
High Pressure Research Center Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland, [email protected].
M. Wroblewski
Affiliation:
High Pressure Research Center Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland, [email protected].
S. Krukowski
Affiliation:
High Pressure Research Center Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland, [email protected].
J. Weyher
Affiliation:
High Pressure Research Center Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland, [email protected].
G. Nowak
Affiliation:
High Pressure Research Center Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland, [email protected].
T. Suski
Affiliation:
High Pressure Research Center Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland, [email protected].
M. Leszczynski
Affiliation:
High Pressure Research Center Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland, [email protected].
H. Teisseyre
Affiliation:
High Pressure Research Center Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland, [email protected].
T. Suski
Affiliation:
High Pressure Research Center Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland, [email protected].
E. Litwin-Staszewska
Affiliation:
High Pressure Research Center Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland, [email protected].
S. Porowski
Affiliation:
High Pressure Research Center Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland, [email protected].
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Abstract

The recent progress in high pressure crystallization of GaN is reported. The results of the growth from the solutions of atomic nitrogen in pure Ga and in its alloys with Mg, Ca and Zn are discussed. It is shown that the growth mechanisms and the physical properties of the crystals depend on the type of dopant added into the solution. In particular, high resistivity (104-106Ωcm) GaN crystals of improved structural quality can be grown from solutions containing Mg. It was also observed that the addition of Mg, Ca and Zn suppress yellow photoluminescence commonly observed in GaN crystals grown without an intentional doping. The preparation of surfaces of GaN substrates for homoepitaxy by mechanical and mechanochemical polishing is discussed. It is shown that atomically flat, thermally stable surfaces are possible to obtain by the applied procedures.

Some most interesting results concerning homoepitaxial growth by MOCVD and MBE is shortly reviewed. In particular, it is shown that perfectly matched (strain free) GaN layers can be deposited on the highly resistive GaN:Mg substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 15
Copyright
Copyright © Materials Research Society 1998

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