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GaN based quantum dot heterostructures

Published online by Cambridge University Press:  15 March 2011

M. A. Reshchikov ,
J. Cui ,
F. Yun ,
A. Baski ,
M. I. Nathan  and
Hadis Morkoç
M. A. Reshchikov
Affiliation:
Virginia Commonwealth University, Richmond, VA 23284-3072, E mail: [email protected]
J. Cui
Affiliation:
Virginia Commonwealth University, Richmond, VA 23284-3072, E mail: [email protected]
F. Yun
Affiliation:
Virginia Commonwealth University, Richmond, VA 23284-3072, E mail: [email protected]
A. Baski
Affiliation:
Virginia Commonwealth University, Richmond, VA 23284-3072, E mail: [email protected]
M. I. Nathan
Affiliation:
On leave from University of Minnesota, Minneapolis, MN
Hadis Morkoç
Affiliation:
Virginia Commonwealth University, Richmond, VA 23284-3072, E mail: [email protected]
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Abstract

GaN dots have been grown on c-plane sapphire and (111) Si substrates by reactive molecular beam epitaxy. A new method involving two-dimensional growth followed by a controlled annealing during which dots are formed was employed. Due the dot nature and large dot density, relatively high luminescence efficiencies were obtained on both substrates. Single layer dots were used for AFM analysis whereas 30 layer dots were used for photoluminescence experiments. AlN barrier layers, some too thick for mechanical interaction, some thin enough for vertical coupling were used. Strong polarization effects lead to a sizeable red shift, which depends on the size of the dots.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 622: Symposium T – Wide-Bandgap Electronic Devices , 2000 , T4.5.1
Copyright
Copyright © Materials Research Society 2000

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References

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