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Gamma Ray Spectrometers Fabricated from Modified Bridgman/Annealed CZT Crystal Material

Published online by Cambridge University Press:  10 February 2011

K. Chattopadhyay ,
H. Chen ,
K-T. Chen ,
Arnold Burger ,
J. P. Flint ,
H. L. Glass  and
R. B. James
K. Chattopadhyay
Affiliation:
Center for Photonic Materials and Devices, Fisk University, Nashville, TN
H. Chen
Affiliation:
Center for Photonic Materials and Devices, Fisk University, Nashville, TN
K-T. Chen
Affiliation:
Center for Photonic Materials and Devices, Fisk University, Nashville, TN
Arnold Burger
Affiliation:
Center for Photonic Materials and Devices, Fisk University, Nashville, TN
J. P. Flint
Affiliation:
Johnson Matthey Electronics, Spokane, WA
H. L. Glass
Affiliation:
Johnson Matthey Electronics, Spokane, WA
R. B. James
Affiliation:
Advanced Electronics Manufacturing Technologies Department, Sandia National Laboratories, Livermore, CA
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Abstract

The CZT boule was grown by a modified vertical Bridgman process using in-situ compounding, Cd over-pressure and a pyrolytic boron nitride crucible within a fused ampoule. During growth, the Cd vapor pressure was near 1 atmosphere. These growth conditions tend to give high purity, good stoichiometry, few precipitates, and dislocation densities in the low to mid-104 cm−2 range. The crystals, after polishing, were annealed in a nearly saturated Cd, Zn atmosphere to fill residual Cd-site vacancies and achieve high resistivity in the 1010 γ-cm range. Low temperature photoluminescence study shows very good crystalline quality and a very low concentration of deep level recombinations. Single crystal samples were diced into 1 cm squares for evaluation as gamma ray detectors. The best detector results (4.5% resolution at 60 keV) were achieved for a 2 hour anneal at 850°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 487: Symposium I – Semiconductors for Room-Temperature Radiation II , 1997 , 123
Copyright
Copyright © Materials Research Society 1998

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