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GalnAsSb Materials for Thermophotovoltaics

Published online by Cambridge University Press:  10 February 2011

C. A. Wang ,
G. W. Turner ,
M. J. Manfra ,
H. K. Choi  and
D. L. Spears
C. A. Wang
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02173–9108
G. W. Turner
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02173–9108
M. J. Manfra
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02173–9108
H. K. Choi
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02173–9108
D. L. Spears
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02173–9108
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Abstract

Gai1−xInxASySb1-y (0.06 < x < 0.18, 0.05 < y < 0.14) epilayers were grown lattice-matched to GaSb substrates by low-pressure organometallic vapor phase epitaxy (OMVPE) using triethylgallium, trimethylindium, tertiarybutylarsine, and trimethylantimony. These epilayers have a mirror-like surface morphology, and exhibit room temperature photoluminescence (PL) with peak emission wavelengths (λP,300K) out to 2.4 μm. 4K PL spectra have a full width at half-maximum of 11 meV or less for λP,4K < 2.1 μm (λP,300K = 2.3 μm). Nominally undoped layers are p-type with typical 300K hole concentration of 9 × 1015 cm−3 and mobility ∼ 450 to 580 cm2/V-s for layers grown at 575°C. Doping studies are reported for the first time for GalnAsSb layers doped n type with diethyltellurium and p type with dimethylzinc. Test diodes of p-GalnAsSb/n-GaSb have an ideality factor that ranges from 1.1 to 1.3. A comparison of electrical, optical, and structural properties of epilayers grown by molecular beam epitaxy indicates OMVPE-grown layers are of comparable quality.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 450: Symposium O – Infrared Applications of Semiconductors , 1996 , 55
Copyright
Copyright © Materials Research Society 1997

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References

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