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Gallium vacancy in GaSb studied by positron lifetime spectroscopy and photoluminescence

Published online by Cambridge University Press:  21 March 2011

W. K. Mui ,
M. K. Lui ,
C. C. Ling ,
C. D. Beling ,
S. Fung ,
K. W. Cheah ,
K. F. Li  and
Y. W. Zhao
W. K. Mui
Affiliation:
Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong, P. R. China
M. K. Lui
Affiliation:
Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong, P. R. China
C. C. Ling
Affiliation:
Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong, P. R. China
C. D. Beling
Affiliation:
Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong, P. R. China
S. Fung
Affiliation:
Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong, P. R. China
K. W. Cheah
Affiliation:
Department of Physics, Hong Kong Baptist University, Hong Kong, P. R. China
K. F. Li
Affiliation:
Department of Physics, Hong Kong Baptist University, Hong Kong, P. R. China
Y. W. Zhao
Affiliation:
P.O. Box 912, Material Science centre, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China correspondence: [email protected]
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Abstract

Positron lifetime technique and photoluminescence (PL) were employed to study the vacancy type defects in p-type Zn-doped and undoped GaSb samples. In the positron lifetime study, Ga vacancy related defect was identified in these materials and it was found to anneal out at temperature of about 350°C. For the PL measurement on the as-grown undoped sample performed at 10K, a transition peak having a photon energy of about 777meV was observed. This transition peak was observed to disappear after a 400°C annealing. Our results is consistent with the general belief that the 777meV transition is related to the VGaGaSb defect, which is the proposed residual acceptor of GaSb.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 692: Symposium H – Progress in Semiconductor Materials for Optoelectronic Applications , 2001 , H9.5.1
Copyright
Copyright © Materials Research Society 2002

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References

[1] Milens, A.G. and Polyakov, H.L., Solid-State Electron. 36, 803 (1993).Google Scholar
[2] Dutta, P.S. and Bhat, H.L., J. Appl. Phys. 81, 5821 (1997).Google Scholar
[3] Baxter, R.D., Bate, R.T. and Reid, F.J., J. Phys. Chem. Solids 26, 41 (1965).Google Scholar
[4] Effer, D. and Effer, P.J., J. Phys. Chem. Solids 25, 451 (1964).Google Scholar
[5] Johnson, E.J. and Fan, H.Y., in Proceedings of the 6th International Conference on Physics of Semiconductors, 1962, p.375.Google Scholar
[6] Campos, M. D'Olne, Gouskov, A., Gouskov, L. and Pons, J.C., J. Appl. Phys. 44, 2642 (1973).Google Scholar
[7] Allégre, J. and Avérous, M., in Defects and Radiation Effects in Semiconductors 1978, Institute of Physics Conference Series No.46 (IOP, London, 1979), Chap. 5, p. 379.Google Scholar
[8] Van Maaren, M.H., J. Phys. Chem. Solids. 27, 472 (1966).Google Scholar
[9] Van Der Meulen, Y.J., J. Phys. Chem. Solids 28, 25 (1967).Google Scholar
[10] Benort a la Guillacume, C. and Lavallard, P., Phys. Rev. B 5, 4900 (1972).Google Scholar
[11] Jakowetz, W., Rühle, W., Breuninger, K. and Pilkuhn, M., Phys. Stat. Solidi A 12, 169 (1972).Google Scholar
[12] Lee, M., Nicholas, D.J., Singer, K.E. and Hamilton, B., J. Appl. Phys. 59, 2895 (1986).Google Scholar
[13] Dutta, P.S., Rao, K.S.R. Koteswara, Bhat, H.L. and Kumar, V., Appl. Phys. A 61, 149 (1995).Google Scholar
[14] Bignazzi, A., Bosacchi, A., Magnanini, R., J. Appl. Phys. 81, 7540 (1997).Google Scholar
[15] Méndez, B., Dutta, P.S., Piqueras, J., Dieguez, E., Appl. Phys. Lett. 67, 2648 (1995).Google Scholar
[16] Krause-Rehberg, R. and Leipner, H.S., Positron Annihilation in Semiconductors, Defect Studies, Vol.127 of Springer Series in Solid-State Sciences (Springer-Verlag, Berlin, 1999).Google Scholar
[17] Hautojärvi, P. and Corbel, C., in Positron Spectroscopy of Solids, Proceedings of the International School of Physics, Enrico Fermi, edited by Dupasquier, A. and Mills, A. P., Jr. (ISO Press, Amsterdam, 1995), p. 491.Google Scholar
[18] Ling, C.C., Fung, S. and Beling, C.D., Phys. Rev. B 64, 075201 (2001).Google Scholar