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Gallium Nitride Thick Layers: Epitaxial Growth and Separation from Substrates

Published online by Cambridge University Press:  10 February 2011

V. V. Bel’kov ,
V. M. Botnaryuk ,
L. M. Fedorov ,
I. I. Diakonu ,
V. V. Krivolapchyuk ,
M. P. Scheglov  and
Yu. V. Zhilyaev
V. V. Bel’kov
Affiliation:
A.F.Ioffe Physical-Technical Institute, St.Petersburg 194021, Russia, [email protected]
V. M. Botnaryuk
Affiliation:
A.F.Ioffe Physical-Technical Institute, St.Petersburg 194021, Russia, [email protected]
L. M. Fedorov
Affiliation:
A.F.Ioffe Physical-Technical Institute, St.Petersburg 194021, Russia, [email protected]
I. I. Diakonu
Affiliation:
A.F.Ioffe Physical-Technical Institute, St.Petersburg 194021, Russia, [email protected]
V. V. Krivolapchyuk
Affiliation:
A.F.Ioffe Physical-Technical Institute, St.Petersburg 194021, Russia, [email protected]
M. P. Scheglov
Affiliation:
A.F.Ioffe Physical-Technical Institute, St.Petersburg 194021, Russia, [email protected]
Yu. V. Zhilyaev
Affiliation:
A.F.Ioffe Physical-Technical Institute, St.Petersburg 194021, Russia, [email protected]
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Abstract

We investigated the possibilities of vapour phase epitaxy in an open tube chloride system for thick GaN film deposition on sapphire substrates. The methodes of the buffer layer deposition were proposed and developed. The methods of fast ( up to 100 microns / hour ) was developed. Parameters of good quality gallium nitride epitaxy were obtained.

To determine the quality of fast grown epitaxial layers we used X-ray diffraction and photoluminescence measurements. The halfwidth of the rocking curve for the best samples was equal to 4-6 minutes. Luminescense spectrum ( T=77K ) had a maximum near 3.46 eV. A signal in the visible wavelength range was hardly observed. Polished layers were transparent.

A special initial treatment of the substrates allowed us to separate thick ( up to 300 micron ) epitaxial gallium nitride layers from sapphire. It was shown that it is possible to use separated films for homoepitaxy of GaN.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 343
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

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