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Gain Spectra and Stimulated Emission in Epitaxial (In,Al) GaN Thin Films

Published online by Cambridge University Press:  10 February 2011

D. Wiesmann ,
I. Brener ,
L. N. Pfeiffer ,
M. A. Khan ,
C. J. Sun ,
C. S. Chang ,
W. Fang  and
S. L. Chuang
D. Wiesmann
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, 700 Mountain Ave., NJ 07974, [email protected]
I. Brener
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, 700 Mountain Ave., NJ 07974, [email protected]
L. N. Pfeiffer
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, 700 Mountain Ave., NJ 07974, [email protected]
M. A. Khan
Affiliation:
APA Optics Inc., 2950 N. E. 84th Lane, Blaine, MN 55449
C. J. Sun
Affiliation:
APA Optics Inc., 2950 N. E. 84th Lane, Blaine, MN 55449
C. S. Chang
Affiliation:
University of Illinois at Urbana-Champaign, Department of Electrical & Computer Eng i-neering, 1406 W. Green Street, Urbana, IL 61801
W. Fang
Affiliation:
University of Illinois at Urbana-Champaign, Department of Electrical & Computer Eng i-neering, 1406 W. Green Street, Urbana, IL 61801
S. L. Chuang
Affiliation:
University of Illinois at Urbana-Champaign, Department of Electrical & Computer Eng i-neering, 1406 W. Green Street, Urbana, IL 61801
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Abstract

We measured the emission of (In,Al) GaN films under high intensity optical pumping both in the direction parallel and perpendicular to the film growth. In the edge emission geometry we determine the gain magnitude from the variable stripe length (VSL) method. We use the spontaneous emission collected perpendicular to the layer plane to calculate the spectral dependence of the gain. Theoretical calculations are in good agreement with those experimentally determined gain spectra. We also show that the observalion of a stimulated emission peak perpendicular to the film is predominantly due to scattering of the in-plane stimulated emission but without ruling out contributions from microstructures in the films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 659
Copyright
Copyright © Materials Research Society 1997

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References

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