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GaAs – on – Si Epitaxy: Results for Coverage of ∼ 1 Monolayer

Published online by Cambridge University Press:  25 February 2011

R. D. Bringans ,
M. A. Olmstead ,
R. I. G. Uhrberg  and
R. Z. Bachrach
R. D. Bringans
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
M. A. Olmstead
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
R. I. G. Uhrberg
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
R. Z. Bachrach
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
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Abstract

Core level spectroscopy measurements have been made on Si substrates with coverages of around one monolayer of As, Ga and GaAs. The interfaces were formed on on-axis Si(100) and Si(111) substrates using molecular beam epitaxy. Results are also presented for an arsenic monolayer on a single-domain Si(100) surface prepared by cutting the crystal off-axis by 4 degrees. The strong bonding between As monolayers and the surface of the substrate causes the GaAs to begin to form islands at average coverages of less than one monolayer. The surface between the islands is found to be terminated by a single atomic layer of As. Use of a Ga predeposition technique shows evidence of reducing the tendancy towards island formation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 94: Symposium D – Initial Stages of Epitaxial Growth , 1987 , 201
Copyright
Copyright © Materials Research Society 1987

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References

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