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The (Ga2O3)1−x(Gd2O3)x, Oxides with x = 0–1.0 for GaAs Passivation

Published online by Cambridge University Press:  10 February 2011

J. Kwo ,
M. Hong ,
A. R. Kortan ,
D. W. Murphy ,
J. P. Mannaerts ,
A. M. Sergent ,
Y. C. Wang  and
K. C. Hsieh
J. Kwo
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974, [email protected]
M. Hong
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974, [email protected]
A. R. Kortan
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974, [email protected]
D. W. Murphy
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974, [email protected]
J. P. Mannaerts
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974, [email protected]
A. M. Sergent
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974, [email protected]
Y. C. Wang
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974, [email protected]
K. C. Hsieh
Affiliation:
Department of Electrical and Computer Engineering, Univ. Illinois, Urbana, IL 61801
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Abstract

Ga2O3(Gd2O3) film was previously discovered to effectively passivate GaAs surface, and the employment of this oxide as gate dielectric has led to the first demonstration of the enhancement-mode GaAs metal oxide semiconductor field effect transistors (MOSFETs) with inversion. In order to gain insight into the passivation mechanism and elucidate the role of Gd2O3, we have carried out a systematic study of the dependence of the structural and dielectric properties of (Ga2O3)1−x(Gd2O3) on the Gd (x) content. Our studies indicate that it is necessary to have the Gd addition exceeding 14% in order to form an electrically insulating dielectric with low interfacial state density. Furthermore, we found that pure Gd2O3 film grows epitaxially on GaAs in the single domain, (110) oriented Mn2O3 structure. This new crystalline dielectric has a dielectric constant ∼10, and shows excellent dielectric properties with low leakage and high breakdown strength even for films as thin as 2.5 nm. We expect that epitaxial growth of the Mn2O3 structure can be extended to other rare earth oxides, and to other semiconductor substrates like Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 573: Symposium Z – Compound Semiconductor Surface Passivation and Novel Device.. , 1999 , 57
Copyright
Copyright © Materials Research Society 1999

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References

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