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Furnace Annealing of Ion Implanted Polycrystalline Silicon

Published online by Cambridge University Press:  15 February 2011

J.L. Tandon ,
H.B. Harrison ,
C.L. Neoh ,
K.T. Short  and
J.S. Williams
J.L. Tandon
Affiliation:
Department of Communication and Electronic Engineering, RMIT, Melbourne, 3000, Australia
H.B. Harrison
Affiliation:
Department of Communication and Electronic Engineering, RMIT, Melbourne, 3000, Australia
C.L. Neoh
Affiliation:
Department of Communication and Electronic Engineering, RMIT, Melbourne, 3000, Australia
K.T. Short
Affiliation:
Department of Communication and Electronic Engineering, RMIT, Melbourne, 3000, Australia
J.S. Williams
Affiliation:
Department of Communication and Electronic Engineering, RMIT, Melbourne, 3000, Australia
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Abstract

Rutherford backscattering, Van der Pauw and TEM measurements were used to characterise the annealing behaviour of antimony implanted LPCVD polysilicon. High electrical activity without dopant redistribution was obtained for 600°C annealing of 1 × 1015 cm−2 and 3×1015 cm−2 antimony implanted samples. Subsequent annealing at temperatures ≥900° C resulted in considerable grain-boundary-assisted redistribution of antimony within the polycrystalline layers and associated changes in sheet resistance. Our results suggest that the sheet resistance of the films is controlled by dopant segregation at grain boundaries and the fraction of antimony distributed on active sites within individual grains.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 5: Symposium B – Grain Boundaries in Semiconductors , 1981 , 317
Copyright
Copyright © Materials Research Society 1982

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References

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