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Furnace Anneal of A–Axis Sapphire Amorphised by Indium Ion Implantation

Published online by Cambridge University Press:  25 February 2011

D. K. Sood  and
D. X. Cao
D. K. Sood
Affiliation:
Microelectronics and Materials Technology Centre, Royal Melbourne Institute of Technology, GPO Box 2476V, Melbourne 3001, Australia
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Abstract

Indium implantation at 77°K into a–axis sapphire to peak concentrations of 6–45 mol % In produces amorphous surface layers. Isothermal annealing in Ar at temperatures between 600–900°C shows effects strongly dependent on ion dose. At lower doses <2×1016 In/cm2, the amorphous layer undergoes epitaxial regrowth as the amorphous to crystalline interface advances out towards the surface. Regrowth velocity is high in about the first half hour of the anneal. Regrowth obeys Arrhenius behaviour with an activation energy of 0.7eV for initial faster growth and 1.28eV for further anneal times. The amorphous phase transforms directly to ⊥-A12O3 without any evidence of an intermediary γ-phase. At higher doses, epitaxial regrowth is substantially retarded and rapid diffusion of In within the amorphous phase dominates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 128: Symposium A – Processing and Characterization of Materials Using Ion Beams , 1988 , 587
Copyright
Copyright © Materials Research Society 1989

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References

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