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Fundamentals of Energy Transfer During Picosecond Irradiation of Silicon

Published online by Cambridge University Press:  15 February 2011

N. Bloembergen ,
H. Kurz ,
J.M. Liu  and
R. Yen
N. Bloembergen
Affiliation:
Gordon McKay Laboratory, Division of Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, USA
H. Kurz
Affiliation:
Gordon McKay Laboratory, Division of Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, USA
J.M. Liu
Affiliation:
Gordon McKay Laboratory, Division of Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, USA
R. Yen
Affiliation:
Gordon McKay Laboratory, Division of Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, USA
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Abstract

The fundamentals of energy transfer in semiconductors during and following pulsed laser excitation are reviewed within the frame of results obtained in picosecond laser experiments. This paper discusses the theoretical processes as well as the experimental evidence, which sets limits of electron and lattice temperature of irradiated silicon. Simple thermal melting is the most probable explanation for the laser induced phase transitions observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 3
Copyright
Copyright © Materials Research Society 1982

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References

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