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Fundamental Study and Oxide Reliability of the MBE-Grown Ga2−xGdxO3 Dielectric Oxide for Compound Semiconductor MOSFETs

Published online by Cambridge University Press:  17 March 2011

J. Kwo ,
M. Hong ,
J. P. Mannaerts ,
Y. J. Lee ,
Y. D. Wu ,
W. G. Lee ,
S. Milkap ,
B. Yang  and
T. Gustaffson
J. Kwo
Affiliation:
Dept. of Phys., National Tsing Hua University, Hsin Chu, Taiwan, 300
M. Hong
Affiliation:
Dept. of Mat. Sci. & Eng, National Tsing Hua University, Hsin Chu, Taiwan, 300
J. P. Mannaerts
Affiliation:
Dept. of Mat. Sci. & Eng, National Tsing Hua University, Hsin Chu, Taiwan, 300
Y. J. Lee
Affiliation:
Dept. of Mat. Sci. & Eng, National Tsing Hua University, Hsin Chu, Taiwan, 300
Y. D. Wu
Affiliation:
Dept. of Mat. Sci. & Eng, National Tsing Hua University, Hsin Chu, Taiwan, 300
W. G. Lee
Affiliation:
Dept. of Mat. Sci. & Eng, National Tsing Hua University, Hsin Chu, Taiwan, 300
S. Milkap
Affiliation:
Electronic Research and Service Organization, Industrial Technology and Research Institute, Hsin Chu, Taiwan, 300
B. Yang
Affiliation:
Agere Systems, Allentown, PA
T. Gustaffson
Affiliation:
Dept. of Physic, Rutgers University, Piscataway, NJ
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Abstract

We have extended our invented high k dielectrics Ga2−xGdxO3 oxide to compound semiconductors of AlGaAs, InGaAs, and InP, and demonstrated the formation of low leakage, insulating barrier on the (100) surface. Fundamental studies of the MOS diodes consisting of Au/GGG mostly on InGaAs are reported, including the crystal-chemical and electrical properties to address the oxide reliability issue. An atomically abrupt interface between the oxide/GaAs interface was achieved by the MBE growth. Systematic post annealing studies of varying temperature and gas species were carried out to improve the dielectric performance such as the reduction of frequency dispersion, voltage hysteresis, and interfacial state density Dit. We show that our results are essential to device processing based on the oxide, and to establish a viable GaAs MOSFET technology.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 811: Symposia D/E – Integration of Advanced Micro-and Nanelectronic Devices-Critical Issues and Solutions , 2004 , E1.12
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1. Hong, M., Liu, C. T., Reese, H., and Kwo, J. in “Encyclopedia of Electrical and Electronics Engineering”, 19, 87–100, Ed. by Webster, J. G., Published by John Wiley & Sons, New York, (1999).Google Scholar
2. Hong, M., Passlack, M., Mannaerts, J. P., Kwo, J., Chu, S. N. G., Moriya, N., Hou, S. Y., and Fratello, V. J., J. Vac. Sci. Technol. B 14, 2297 (1996).Google Scholar
3. Passlack, M., Hong, M., Mannaerts, J. P., Kwo, J., Opila, R. L., Chu, S. N. G., Moriya, N., and Ren, F., IEEE Transaction of Electron Devices, 44, 214 (1997).Google Scholar
4. Ren, F., Hong, M., Hobson, W. S., Kuo, J. M., Lothian, J. R., Mannaerts, J. P., Kwo, J., Chen, Y. K., and Cho, A. Y., IEDM Technical Digest, 943 (1996), and also in Solid State Electronics, 41, 1751 (1997).Google Scholar
5. Hong, M., Kwo, J., Kortan, A. R., Mannaerts, J. P., and Sergent, A. M., Science, 283, 1897 (1999).Google Scholar
6. Yacoby, Y., Sowwan, A. M., Stern, E., Cross, J. O., Brewe, D., Pindak, R., Pitney, J., Dufresne, E. M., and Clarke, R., Nature Materials 1, 99 (2002).Google Scholar
7. Busch, B.W., Kwo, J., Hong, M., Mannaerts, J.P., and Sapjeta, B.J., Schulte, W.H., Garfunkel, E., and Gustafsson, T., Appl. Phys. Lett. 79, 2447 (2001).Google Scholar
8. Kwo, J., Hong, M., Kortan, A.R., Queeney, K.L., Chabal, Y.J., Mannaerts, J.P., Boone, T., Krajewski, J.J., Sergent, A.M., and Rosamilia, J.M., Appl. Phys. Lett. 77, 130 (2000).Google Scholar
9. Kwo, J., Hong, M., Kortan, A.R., Queeney, K.L., Chabal, Y.J., Opila, R.L. Jr., Muller, D.A., Chu, S.N.G., Sapjeta, B.J., Lay, T.S., Mannaerts, J.P., Boone, T., Krautter, H.W., Krajewski, J. J., Sergent, A.M., and Rosamilia, J.M., J. Appl. Phys. 89, 3920, (2001).Google Scholar
10. Kwo, J. and Hong, M., MRS Proceedings Vol. 745, Symposium of “Novel Materials and Processes for Advanced CMOS”, edited by Gardner, Mark I., Gendt, Stefan De, Maria, Jon-Paul, and Stemmer, Susanne, (2003).Google Scholar
11. Kwo, J., Hong, M., Mannaerts, J. P., Lee, Y. J., Wu, Y. D., Lee, W.G., Chu, C. S, Milkap, S., Tang, B., and Gustffson, T., to be published.Google Scholar
12. Lue, H.T., Liu, C.Y., and Tseng, T.Y., IEEE Electron Device Letters, 23, 553, (2002).Google Scholar