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Fundamental Modeling of Transient Enhanced Diffusion through Extended Defect Evolution

Published online by Cambridge University Press:  15 February 2011

A. H. Gencer ,
S. Chakravarthi ,
I. Clejan  and
S. T. Dunham
A. H. Gencer
Affiliation:
Department of Electrical and Computer Engineering, Boston University, Boston, MA 02215
S. Chakravarthi
Affiliation:
Department of Electrical and Computer Engineering, Boston University, Boston, MA 02215
I. Clejan
Affiliation:
Department of Electrical and Computer Engineering, Boston University, Boston, MA 02215
S. T. Dunham
Affiliation:
Department of Electrical and Computer Engineering, Boston University, Boston, MA 02215
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Extract

Prediction of transient enhanced diffusion (TED) requires modeling of extended defects of many types, such as {311} defects, dislocation loops, boron-interstitial clusters, arsenic precipitates, etc. These extended defects not only form individually, but they also interact with each other through changes in point defect and solute concentrations. We have developed a fundamental model which can account for the behavior of a broad range of extended defects, as well as their interactions with each other. We have successfully applied and parameterized our model to a range of systems and conditions, some of which are presented in this paper.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 469: Symposium E – Defects and Diffusion in Silicon Processing , 1997 , 359
Copyright
Copyright © Materials Research Society 1997

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References

1 Gencer, A.H. and Dunham, S.T., J. Appl. Phys. 81, 631 (1997).Google Scholar
2 Clejan, I. and Dunham, S.T., in Process Physics and Modeling in Semiconductor Technology, 398 (1996).Google Scholar
3 Clejan, I. and Dunham, S.T., J. Appl. Phys. 78, 7327 (1995).Google Scholar
4 Gencer, A.H.. DOPDEES User's Manual (1996).Google Scholar
5 Pan, G.Z., Tu, K.N., and Prussin, S., Appl. Phys. Lett. 68, 1654 (1996).Google Scholar
6 Lui, J., Law, M.E., and Jones, K.S., Solid State Electronics 38, 1305 (1995).Google Scholar
7 Dokumaci, O., Rousseau, P., Luninng, S., Krishnamoorthy, V., Jones, K.S., and Law, M.E., J. Appl. Phys. 78, 828 (1995).Google Scholar