Hostname: page-component-745bb68f8f-l4dxg Total loading time: 0 Render date: 2025-02-10T08:07:49.306Z Has data issue: false hasContentIssue false
  • English
  • Français

Fundamental Mechanisms for Hg Vacancy and Interstitial Modeling in Mercury Cadmium Telluride

Published online by Cambridge University Press:  15 February 2011

S.L. Holander ,
H.G. Robinson  and
C.R. Helms
S.L. Holander
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305.
H.G. Robinson
Affiliation:
Department of Electrical Engineering, Stanford University, Stanford, CA 94305.
C.R. Helms
Affiliation:
Department of Electrical Engineering, Stanford University, Stanford, CA 94305.
Get access

Abstract

Due to the large concentration of electrically active defects in Hg1-xCdxTe, it is important to properly account for them when designing fabrication processes for infrared focal plane arrays (IRFPAs). Stanford University's Mercury Cadmium Telluride Process Simulator, SUMerCad, is being developed to simulate the interaction of native defects and dopants in Hg0.8Cd0.2Te in order to accurately model various processing techniques. Non-linear coupled differential equations are used to model the physics of the diffusion mechanisms, rather than extrapolating the diffusion profiles from experimental data. The fundamental constants for the point defects were obtained by exercising the simulator over the various parameter spaces and comparing the results to experimental work and best principle calculations. The methodologies used, point defect mechanisms modeled, and parameters determined are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 389: Symposium R – Modedling and Simulation of Thin-Film Processing , 1995 , 47
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Berding, M.A., van Schilfgaarde, M., and Sher, A., presented at the 1994 U.S. Workshop on the Phys. and Chem. of MCT and Other IR Materials, San Antonio, TX, 1994 (in press: J. Electron. Mater.)Google Scholar
2 Helms, C.R., Melendez, J.L., Robinson, H.G., Holander, S., Hasan, J., and Halepete, S., presented at the 1994 U.S. Workshop on the Phys. and Chem. of MCT and Other IR Materials, San Antonio, TX, 1994 (in press: J. Electron. Mater.)Google Scholar
3 Melendez, J.L. and Helms, C.R., presented at the 1993 U.S. Workshop on the Phys. and Chem. of MCT and Other IR Materials, Seattle, WA, 1993 (in press: J. Electron. Mater.)Google Scholar
4 Melendez, J.L. and Helms, C.R., J. Electron. Mater., 22 (8), 999 (1993).Google Scholar
5 Melendez, J.L., PhD Thesis, Stanford University, 1993.Google Scholar
6 Schaake, H.F., J. Electron.Mater., 14 (5), 513 (1985).Google Scholar
7 Vydyanath, H.R., J. Electrochem. Soc., 128 (12), 2609 (1981).Google Scholar
8 Brown, M. and Willoughby, A.F.W., J. Cryst. Growth, 59, 27 (1982).Google Scholar
9 Archer, N.A., Palfrey, H.D., and Willoughby, A.F.W., J. Cryst. Growth, 117 (2), 177 (1992).Google Scholar
10 Archer, N.A. and Palfrey, H.D., J. Electron. Mater. 20 (6), 419 (1991).Google Scholar
11 Jones, C.L., Quelch, M.J.T., Capper, P., and Gosney, J.J., J. Appl. Phys., 53 (12), 9080 (1982).Google Scholar