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Functional voids by gas ion implantation for applications in semiconductor processing

Published online by Cambridge University Press:  01 February 2011

V. Raineri  and
E. Rimini
V. Raineri
Affiliation:
CNR - IMM sezione Catania - Stradale Primosole, 50 I 95121 Catania, Italy
E. Rimini
Affiliation:
CNR - IMM sezione Catania - Stradale Primosole, 50 I 95121 Catania, Italy INFM and Dipartimento di Fisica dell'Università Corso Italia, 57 - I 95129 Catania, Italy
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Abstract

The recent work in the field is reviewed and some new applications are reported. In particular we review some aspects where new contributions have been added. The mechanism of bubble formation when He is implanted into silicon is described till the supersaturation of vacancies (void formation). The void evolution has been described considering direct coalescence or Ostwald ripening. Applications such as gettering, lifetime control, and more recently nanosensors for interstitials are critically discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 719: Symposium F – Defect- and Impurity-Engineered Semiconductors and Devices III , 2002 , F7.1
Copyright
Copyright © Materials Research Society 2002

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