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Fully Planar Ion-Implanted 0.98 μm Strained Quantum Well Laser

Published online by Cambridge University Press:  22 February 2011

W. S. Hobson ,
S. J. Pearton ,
F. Ren ,
S. N. G. Chu ,
R. Bylsma  and
R. G. Elliman
W. S. Hobson
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
S. J. Pearton
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
F. Ren
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
S. N. G. Chu
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
R. Bylsma
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
R. G. Elliman
Affiliation:
Australian National University, Canterra ACT 2601, Australia
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Abstract

GaAs-InGaAs quantum well laser structures were fabricated using a 5 MeV O+ implant (∼1015 cm−2 dose) to disorder the quantum well for optical isolation upon post-implant annealing. End-of-range disorder is placed in the underlying substrate, and consisted of small dislocation loops. Electrical isolation was provided by a subsequent multiple energy (40-300 keV) O+ implant scheme. Masking for both implant steps was obtained using a lift-off Au deposition. This fully planar process is considerably simpler than the Si diffusion process for quantum well disordering that is commonly employed for 0.98 gim laser fabrication. A discussion will be given of the relative advantages and disadvantages of the two processes, with particular emphasis on reliability issues.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 300: Symposium D1 – III-V Electronic and Photonic Device Fabrication and Performance , 1993 , 107
Copyright
Copyright © Materials Research Society 1993

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References

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