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Full Band Monte Carlo Simulation of Short Channel MOSFETs in 4H and 6H-SiC

Published online by Cambridge University Press:  10 February 2011

M. Hjelm ,
H-E. Nilssoni ,
E. Dubaric ,
C. Persson ,
P. Käckell  and
C. S. Petersson
M. Hjelm
Affiliation:
Department of Information Technology, Mid-Sweden University, S-851 70 Sundsvall, Sweden, [email protected] Department of Solid State Electronics, Kungl. Tekniska Hbgskolan (KTH), Elektrum 229, S-164 40 Kista, Sweden
H-E. Nilssoni
Affiliation:
Department of Information Technology, Mid-Sweden University, S-851 70 Sundsvall, Sweden, [email protected] Department of Solid State Electronics, Kungl. Tekniska Hbgskolan (KTH), Elektrum 229, S-164 40 Kista, Sweden
E. Dubaric
Affiliation:
Department of Information Technology, Mid-Sweden University, S-851 70 Sundsvall, Sweden, [email protected] Department of Solid State Electronics, Kungl. Tekniska Hbgskolan (KTH), Elektrum 229, S-164 40 Kista, Sweden
C. Persson
Affiliation:
Department of Physics and Measurement Technology, Linkiping University, S-581 83 Linktping, Sweden
P. Käckell
Affiliation:
Institut für Festkbrpertheorie und Theoretische Optik, Max-Wien-Platz 1, 07743 Jena, Germany
C. S. Petersson
Affiliation:
Department of Solid State Electronics, Kungl. Tekniska Hbgskolan (KTH), Elektrum 229, S-164 40 Kista, Sweden
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Abstract

This is a presentation of a full band Monte Carlo (MC) study, which compares electron transport and device performance for 4H and 6H-SiC 100 nm n-channel MOSFETs. The model used for the electrons is based on data from a full potential band structure calculation using the Local Density Approximation (LDA) to the Density Functional Theory (DFT). For the holes the transport is based on a three band k-p model including spin orbit interaction. The two polytypes are compared regarding surface mobilities obtained with the program, as well as transconductance, unit current gain frequency, carrier velocity, I-V characteristics and energy distribution in the channel for the MOSFETs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 572: Symposium Y – Wide-Bandgap Semiconductors for High-Power, High Frequency… , 1999 , 69
Copyright
Copyright © Materials Research Society 1999

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References

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