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Ftir Studies of Silica Surface Passivation and Subsequent Adsorption/Desorption Behavior of Copper Metalorganic Precursors

Published online by Cambridge University Press:  21 February 2011

Janos Farkas ,
T.T. Kodas  and
M.M. Hampden-Smith
Janos Farkas
Affiliation:
Department of Chemical and Nuclear Engineering, University of New Mexico, Albuquerque, NM 87131, USA
T.T. Kodas
Affiliation:
Department of Chemical and Nuclear Engineering, University of New Mexico, Albuquerque, NM 87131, USA
M.M. Hampden-Smith
Affiliation:
Department of Chemistry, University of New Mexico, Albuquerque, NM 87131, USA
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Abstract

The passivation of silica surfaces and the subsequent adsorption/desorption of (hfac)Cu(2-butyne) and (hfac)Cu(VTMS) precursors were studied. The goal was to enhance the selective deposition of copper from these compounds during chemical vapor deposition (CVD). The passivation reagents were hexamethyldisilazane (HMDS) and triisobutylaluminum (TIBA). Surface passivation with HMDS shielded the hydrogenbonded surface hydroxyl groups and the strained siloxane surface sites making them inaccessible to both (hfac)Cu(VTMS) and (hfac)Cu(2-butyne) where hfac = 1,1,1,5,5,5-hexafluoroacetylacetonate and VTMS = vinyltrimethylsilane. The adsorbed copper(I) compounds molecularly desorbed from the HMDS-passivated surface below 125 °C. The surface groups resulting from the reaction of TIBA with the silica surface reacted with the copper compounds subsequently adsorbed at 275 °C. The reaction products were present on the surface above 450 °C. These results demonstrate the utility of SiO2 surface modification using HMDS for control of selective CVD of copper.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 315: Symposium Y – Surface Chemical Cleaning and Passivation for Semiconductor Processing , 1993 , 97
Copyright
Copyright © Materials Research Society 1993

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References

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