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FT-IR, Sims and Electrical Characterization of Si3N4 Thin Films Obtained from C.V.D. Assisted by In-Situ Electrical Discharge

Published online by Cambridge University Press:  22 February 2011

B. Balland ,
J. C. Bureau ,
C. Plossu  and
R. Botton
B. Balland
Affiliation:
L.P.M. (URA-CNRS 358) Bat.502, 1.N.S.A.- Lyon - F-69621 Villeurbanne CX France
J. C. Bureau
Affiliation:
LTCM (URA-CNRS 116) Bat.401, 1.N.S.A.- Lyon - F-69621 Villeurbanne CX France
C. Plossu
Affiliation:
L.P.M. (URA-CNRS 358) Bat.502, 1.N.S.A.- Lyon - F-69621 Villeurbanne CX France
R. Botton
Affiliation:
L.P.M. (URA-CNRS 358) Bat.502, 1.N.S.A.- Lyon - F-69621 Villeurbanne CX France
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Abstract

An original process has been developed enabling the fabrication of CVD insulating (Si3N4) thin films, by means of an in-situ activation of the reactions at T < 400°C and under P=1 to 2 torr. Mono-Si substrates were nitrided using a mixture of argon containing SiH4 and NH3·O2 has also been added to the reaction gases. The activation was performed by a DC electrical discharge. The substrate was not used as an electrode and was placed parallel to the discharge current. This configuration minimized the contamination of the films during their formation. The obtained layers have been analyzed using FT-IR and SIMS.

M.I.S. structures have been realized, and the flat-band shift ΔVFB and the interface state density Nit have been extracted from the high and low frequency C-V characteristics. The values of the flat-band shift depend on the discharge domain and decrease with temperature. Good electrical characteristics are obtained for thin films formed at low temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 284: Symposium G – Amorphous Insulating Thin Films , 1992 , 39
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1. Hamano, K., Jap. J. of Appl. Phys. 23, 1209 (1984)Google Scholar
2. Morosanu, C.E., Proceedings of the Symposium on Silicon nitride and silicon dioxide thin insulating films. (Electrochemical Society, 85 (7), Pennington USA, 1989)Google Scholar
3. Numasawa, Y., Jap. J. of Appl Phys. 22 (12), L792 (1983)Google Scholar
4. Balland, B., Bureau, J.C. and Glachant, A., Appl. Surf. Sci. 89, 210 (1989)Google Scholar
5. Balland, B., Glachant, A., Bureau, J.C. and Plossu, C., Thin Solid Films 190, 103 (1990)Google Scholar
6. Balland, B., Lemiti, M., Audisio, S. and Bureau, J.C., J. of Electrochemical Society 137, (9), 2846 (1990)Google Scholar
7. Knolle, W.R., Thin Solid Films 168, 123 (1989)Google Scholar
8. Ling, C.H., Jap. J. of Appl. Phys. 25, 1490 (1986)Google Scholar
9. Landford, W.A. and Rand, M.J., J. Appl. Phys. 49 (4), 2473 (1978)Google Scholar
10. Knolle, W. R. and Osenbach, J.W., J. Electrochem Soc, 135 (5), 1211 (1988)Google Scholar
11. Nguyen, V.S. (1983), Proceedings of the Symposium on Silicon nitride. (Electrochemical Society, 83, Pennington USA, 1989), P. 453 Google Scholar
12. Rand, M.J. and Roberts, J.F., J. Electrochem Soc, 120, 446 (1973)Google Scholar