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Ftir and UV Study of Amorphous Silicon-Boron Alloys Deposited by LPCVD

Published online by Cambridge University Press:  10 February 2011

G.-R. Yang ,
Y.-P. Zhao  and
B. Y. Tong
G.-R. Yang
Affiliation:
Center for Integrated Electronics and Electronics Manufacturing, and Department of Physics, Rensselaer Polytechnic Institute, Troy, NY 12180
Y.-P. Zhao
Affiliation:
Center for Integrated Electronics and Electronics Manufacturing, and Department of Physics, Rensselaer Polytechnic Institute, Troy, NY 12180
B. Y. Tong
Affiliation:
University of Western Ontario, Department of Physics, Ontario, Canada N6A3K7
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Abstract

As-deposited and wet oxidized a-Si:B alloy deposited by low pressure chemical vapor deposition (LPCVD) with various boron content was studied by UV Spectroscopy and Fourier Transform Infrared Spectroscopy. It is found that the optical band gap of a-Si:B varies with respect to the boron content, which provides potential application probability in narrow-gap photovoltaic devices. This effect is associated with the structure change induced by B content. The oxidation behaviors of a-Si:B films with boron content 3 at.% – 25 at.% are different from those with boron content exceeded 30 at.%. Possible oxidation mechanism for different boron content a-Si:B film are proposed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 426: Symposium J – Thin Films for Photovoltaic and Related Device , 1996 , 83
Copyright
Copyright © Materials Research Society 1996

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