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Fs Spectroscopy of Phonon Emission and Absorption for A Cold Plasma in Gallium Arsenide

Published online by Cambridge University Press:  15 February 2011

A. Agnesi ,
A. Cavalleri ,
A.M. Malvezzi  and
G.C. Reali
A. Agnesi
Affiliation:
Dipartimento di Elettronica, Universita’ di Pavia, Via Ferrata 1, 127100 Pavia, Italy
A. Cavalleri
Affiliation:
Dipartimento di Elettronica, Universita’ di Pavia, Via Ferrata 1, 127100 Pavia, Italy
A.M. Malvezzi
Affiliation:
Dipartimento di Elettronica, Universita’ di Pavia, Via Ferrata 1, 127100 Pavia, Italy
G.C. Reali
Affiliation:
Dipartimento di Elettronica, Universita’ di Pavia, Via Ferrata 1, 127100 Pavia, Italy
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Abstract

Degenerate pump and probe measurements on bulk GaAs <100> surfaces with sub-100 fs near infrared laser pulses have been performed in the 0.8 − 3 × 1017 carriers cm-3 excitation range at room temperature. Transient reflectivity data reveal the progressive extinction of the LO-phonon emission channel when the excess excitation energy is decreased. At these wavelengths and for low excitation levels, acoustic phonon absorption from conduction band minimum is observed. Surface recombination rates are deduced from the picosecond evolution of the reflectivity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 397: Symposium B – Advanced laser Processing of Materials-Fundamentals and Applications , 1995 , 21
Copyright
Copyright © Materials Research Society 1996

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References

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