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From the Understanding of the Reaction Mechanism Towards Optimizing the Deposition Rate and Optoelectronic Properties of a-Si:H

Published online by Cambridge University Press:  25 February 2011

S. Veprek ,
M. Heintze ,
R. Bayer  and
N. Jurčik-Rajman
S. Veprek
Affiliation:
Institute for Chemistry of Information Recording, Technical University Munich, Lichtenbergstr. 4, D-8046 Garching-Hünchen, Fed. Rep. Germany
M. Heintze
Affiliation:
Institute of Inorganic Chemistry, University of Zürich, Winterthurerstr. 190, CH-8057 Zürich, Switzerland
R. Bayer
Affiliation:
Institute for Chemistry of Information Recording, Technical University Munich, Lichtenbergstr. 4, D-8046 Garching-Hünchen, Fed. Rep. Germany
N. Jurčik-Rajman
Affiliation:
Institute of Inorganic Chemistry, University of Zürich, Winterthurerstr. 190, CH-8057 Zürich, Switzerland
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Abstract

We present new results of kinetic studies of the deposition of high quality a-Si:H which strongly support the reaction mechanism suggested in our earlier papers: 1. SiH4 → SiH2; 2. SiH2 + SiS4 → Si2H6 (SiH2 + Si2H6 → Si3H6); 3. Si2H6 → 2a-Si:H (Si3H8 → 3a-Si:H). The “SiH3 mechanism”, as promoted by several workers, is in contradiction with these experimental facts.

The di- and trisilane, which have a much higher reactive sticking coefficient than monosilane, play the role of reactive intermediates which facilitate the heterogeneous decomposition of silicon carrying species at the surface of the growing film. The values of the reactive sticking coefficient of Si2H6 and Si3H8 depend on the surface coverage by chemisorbed hydrogen; they increase with decreasing surface coverage. Under the conditions of the growth of high quality a-Si:H films the reactive sticking coefficient of disilane amounts to 10−4 to 10−2 which is in a good agreement with recent data of other authors.

The rate determining step of the growth of high quality a-Si:H films is the desorption of hydrogen from the surface of the growing film. This can be strongly enhanced by ion bombardment at impact energy of <100 eV. In this way, homogeneous, good quality films were deposited at rates up to 1800 Angströms/min, and there is a well justified hope that this rate can be further increased.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 3
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

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