Hostname: page-component-cd9895bd7-dk4vv Total loading time: 0 Render date: 2024-12-27T02:39:21.780Z Has data issue: false hasContentIssue false
  • English
  • Français

Frictional behavior and particle adhesion of abrasive particles during Cu CMP

Published online by Cambridge University Press:  01 February 2011

Yi-Koan Hong ,
Ja-Hyung Han ,
Jae-Hoon Song  and
Jin-Goo Park
Yi-Koan Hong
Affiliation:
Division of Materials and Chemical Engineering, Hanyang University, Ansan, 426-791, Korea
Ja-Hyung Han
Affiliation:
Division of Materials and Chemical Engineering, Hanyang University, Ansan, 426-791, Korea
Jae-Hoon Song
Affiliation:
Division of Materials and Chemical Engineering, Hanyang University, Ansan, 426-791, Korea
Jin-Goo Park
Affiliation:
Division of Materials and Chemical Engineering, Hanyang University, Ansan, 426-791, Korea
Get access

Abstract

The friction behavior and adhesion of abrasive particles were experimentally investigated during Cu CMP process. The highest particle adhesion force was measured in alumina slurry without citric acid. However, the alumina slurry with addition of citric acid had the lowest particle adhesion due to the adsorption of citrate ions on the alumina surfaces. While citrate ions could be easily adsorbed on alumina particles, silica particle showed the least effect on adsorption in citric acid solutions. The magnitude of adsorptions of citrate ions on the particle surfaces had significant effect on frictional behavior as well as adhesion force. Higher particle adhesion force resulted in higher friction, particle contamination and scratches in CMP process. It indicates that the magnitudes of particle adhesions on wafer surfaces in slurries can be directly related to the frictional behavior during CMP process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 867: Symposium W – Chemical-Mechanical Planarization-Integration, Technology and Reliability , 2005 , W6.2
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Lloyd, J. R., Microelctron. Reliab. Vol 39., pp. 1595–1602, (1999)Google Scholar
[2] Kim, K.N., et al., Symposium on VLSI Technology Digest of Technical paper, p 16–17, (1998)Google Scholar
[3] Skinner, J., Game, N., J. of Phys. D 5, 2087–2094 (1972)Google Scholar
[4] Ando, Y., Ishikawa, Y., Kitahara, T., Trans. ASME J. of Tribol. 117, 569–574, (1995)Google Scholar
[5] Ando, Y., J. Ino, Wear. 216, 115–122, (1998)Google Scholar
[6] Lee, S.Y, Lee, S. H., and Park, J.G., J. of Electrochem. Soc., 150, G 327–332 (2003)Google Scholar
[7] Hong, Y.K., Eom, D.H., Lee, S.H., Kim, T.G., Park, J.G., and Busnaina, A.A., J. of The Electrochemical Society, 151 (11) G756–G761 (2004)Google Scholar