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Frequency Agile Microwave Applications Using (Ba,Sr)TiO3/Y3Fe5O12 Multilayer Grown by Pulsed Laser Deposition

Published online by Cambridge University Press:  10 February 2011

W.J. Kim ,
W. Chang ,
S.B. Qadri ,
H.D. Wu ,
J.M. Pond ,
S.W. Kirchoefer ,
H.S. Newman ,
D.B. Chrisey  and
J.S. Horwitz
W.J. Kim
Affiliation:
SFA Inc., 1401 McCormick Dr., Largo, MD 20774
W. Chang
Affiliation:
Naval Research Laboratory, 4555 Overlook Ave., Washington D.C. 20375
S.B. Qadri
Affiliation:
Naval Research Laboratory, 4555 Overlook Ave., Washington D.C. 20375
H.D. Wu
Affiliation:
SFA Inc., 1401 McCormick Dr., Largo, MD 20774
J.M. Pond
Affiliation:
Naval Research Laboratory, 4555 Overlook Ave., Washington D.C. 20375
S.W. Kirchoefer
Affiliation:
Naval Research Laboratory, 4555 Overlook Ave., Washington D.C. 20375
H.S. Newman
Affiliation:
Naval Research Laboratory, 4555 Overlook Ave., Washington D.C. 20375
D.B. Chrisey
Affiliation:
Naval Research Laboratory, 4555 Overlook Ave., Washington D.C. 20375
J.S. Horwitz
Affiliation:
Naval Research Laboratory, 4555 Overlook Ave., Washington D.C. 20375
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Abstract

(Ba,Sr)TiO3 (BST) thin films have been deposited by pulsed laser deposition (PLD) onto single crystal Y3Fe5O12 (YIG) substrates with/without an MgO buffer layer. The structure and microwave properties of BST films have been investigated as function of substrate orientation and O2 deposition pressures (5-800m Torr). The orientation of BST film is varies with the deposition conditions. The dielectric constant, loss tangent, and change in dielectric constant with an applied electric field have been measured at room temperature using interdigitated capacitors at 0.1 – 20 GHz. Polycrystalline BST films have a high tunability (∼40%) with a dc bias field of 67kV/cm and a dielectric Q (=l/tanδ) between 30 and 40, while (001) oriented BST films have a lower tunability (∼20%) but higher dielectric Q (∼50). A coplanar waveguide transmission line was fabricated from a (001) oriented BST film on (111)YIG which exhibited a 17° differential phase shift with an applied dc bias of 21 kV/cm. An equivalent differential phase shift was achieved with a magnetic field of 160Guass.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 603: Symposium KK – Materials Issues for Tunable RF & Microwave Devices , 1999 , 123
Copyright
Copyright © Materials Research Society 2000

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References

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