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Free-Energy Barrier to Crystallite Nucleation in Solid-Phase Crystallized Poly-Silicon Thin Films

Published online by Cambridge University Press:  10 February 2011

Hideya Kumomi  and
Frank G. Shi
Hideya Kumomi
Affiliation:
Canon Inc., R&D Headquarters, 3–30–2 Shimomaruko, Ohta-ku, Tokyo 146, Japan
Frank G. Shi
Affiliation:
Department of Chemical Engineering and Materials Science, University of California, Irvine, CA 92697–2575
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Abstract

We introduce a non-Arrhenius method for measuring free-energy barrier to nucleation, W*, directly from size distribution of crystallites. W* is determined independent of any model for the nucleation barrier and independent of energy barrier to growth. The method is applicable to three-dimensionally growing crystallites, planar crystallites in thin films, and both compact and fractal crystallites. We apply the method to dendritic crystallites obtained by solid-phase crystallization of amorphous Si thin films into which Si+ ions are implanted at various conditions prior to the isothermal annealing. The ion implantation suppresses the nucleation of the crystallites and enhances the crystallite size of the resulting polycrystalline films. The directly measured W* increases as the accelerating energy or the dose of the Si+ ions increases. This result suggests that the observed suppression of the nucleation could not be accounted for simply by the amor-phization of the preexisting crystallites by the ion bombardment.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 472: Symposium I – Polycrystalline Thin Films - Structure, Texture, Properties..III , 1997 , 403
Copyright
Copyright © Materials Research Society 1997

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References

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