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Fracture mechanisms of GaAs under nanoscratching

Published online by Cambridge University Press:  01 February 2011

J.-M. Solletti ,
M. Parlinska-Wojtan ,
J. Tharian ,
K. Wasmer ,
J. Michler ,
C. Ballif ,
D. Schulz  and
A. Karimi
J.-M. Solletti
Affiliation:
Faculty of Basic Science, IPMC, EPFL, CH-1015-Lausanne, Switzerland.
M. Parlinska-Wojtan
Affiliation:
Faculty of Basic Science, IPMC, EPFL, CH-1015-Lausanne, Switzerland.
J. Tharian
Affiliation:
EMPA Überlandstrasse 129, CH-8600 Dübendorf.
K. Wasmer
Affiliation:
EMPA Feuerwerkstrasse 39, CH – 3602 Thun.
J. Michler
Affiliation:
EMPA Feuerwerkstrasse 39, CH – 3602 Thun.
C. Ballif
Affiliation:
University of Neuchâtel, A.-L. Breguet 2, CH-2000 Neuchâtel.
D. Schulz
Affiliation:
Bookham technologies plc, Binzstrasse 17 CH – 8045 Zürich.
A. Karimi
Affiliation:
Faculty of Basic Science, IPMC, EPFL, CH-1015-Lausanne, Switzerland.
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Abstract

Nanoscratching on GaAs (001) by a pyramidal diamond tip (Berkovitch) indenter has been carried on under different loads, scratching velocities and directions. Plastic deformation and fractures induced by scratching have been investigated by atomic force microscopy (AFM), and by scanning and transmission electron microscopy (SEM and TEM, respectively). Surface images revealed radial and surface tensile cracks. Focused ion beam (FIB) milling of the contact area revealed median and shear fracture distribution in the volume. The different cracks were characterized for various scratching conditions in terms of their direction of propagation, extension and frequencies. Plastic deformations have been characterized by vertical displacement of material. No purely ductile zone was observed, GaAs deformation occurred by fractures and plastic strain. Their preponderances are discussed in terms of material properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 841: Symposium R – Fundamentals of Nanoindentation and Nanotribology III , 2004 , R9.15
Copyright
Copyright © Materials Research Society 2005

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References

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