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Forming-free Resistance Random Access Memory Using Ta2O5/TaOx Bi-layer Prepared by Magnetron Sputtering Method

Published online by Cambridge University Press:  25 May 2012

Natsuki Fukuda ,
Kazunori Fukuju ,
Isamu Yogosawa ,
Kazumasa Horita ,
Shin Kikuchi ,
Yutaka Nishioka  and
Koukou Suu
Natsuki Fukuda
Affiliation:
Institute of Semiconductor and Electronics Technologies, ULVAC, Inc. 1220-1 Suyama, Susono, Shizuoka, 410-1231, Japan
Kazunori Fukuju
Affiliation:
Institute of Semiconductor and Electronics Technologies, ULVAC, Inc. 1220-1 Suyama, Susono, Shizuoka, 410-1231, Japan
Isamu Yogosawa
Affiliation:
Institute of Semiconductor and Electronics Technologies, ULVAC, Inc. 1220-1 Suyama, Susono, Shizuoka, 410-1231, Japan
Kazumasa Horita
Affiliation:
Institute of Semiconductor and Electronics Technologies, ULVAC, Inc. 1220-1 Suyama, Susono, Shizuoka, 410-1231, Japan
Shin Kikuchi
Affiliation:
Institute of Semiconductor and Electronics Technologies, ULVAC, Inc. 1220-1 Suyama, Susono, Shizuoka, 410-1231, Japan
Yutaka Nishioka
Affiliation:
Institute of Semiconductor and Electronics Technologies, ULVAC, Inc. 1220-1 Suyama, Susono, Shizuoka, 410-1231, Japan
Koukou Suu
Affiliation:
Institute of Semiconductor and Electronics Technologies, ULVAC, Inc. 1220-1 Suyama, Susono, Shizuoka, 410-1231, Japan
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Abstract

This paper describes proposal of ReRAM switching mechanism, development of production tool for ReRAM sputtering and improvement in TaOx-ReRAM switching characteristics. We propose that a ReRAM-cell has stack a structure in which an oxygen vacancy supply layer (TaOx) and an oxygen accumulation layer (Ta2O5) sandwiched by the top and bottom electrodes. Resistance change of the ReRAM-cell is caused by the oxygen vacancies migrating between the TaOx and the Ta2O5 layers by applied voltage. This prediction corresponded to the experimental facts. The thickness of Ta2O5 film sputtered by a mass production tool had good uniformity (±1.0%) and excellent stability (±1.0%). Also the sheet resistance uniformity (1σ) of TaOx film had 3.6%. By examining the sputtering conditions, the ReRAM-cell having a Ta2O5/TaOx bi-layer operated in less than 100μA with a forming-free and had excellent endurance property to 1010 cycles at 50nsec.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1430: Symposium E – Materials and Physics of Emerging Nonvolatile Memories , 2012 , mrss12-1430-e03-16
Copyright
Copyright © Materials Research Society 2012

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References

REFERENCES

1. Baek, I. G., Lee, M. S., Seo, S., Lee, M. J., Seo, D.H., Suh, D.-S., Park, J. C., Park, S. O., Kim, H. S., Yoo, I. K., Dhung, U-In and Moon, J. T.. Tech. Dig. Int. Electron Devices Meet., San Francisco, 2004, 23, 6, p587 Google Scholar
2. Choi, B. J., Jeong, D. S., Kim, S. K., Rohde, C., Choi, S., Oh, J. H., Kim, H. J., Hwang, C. S., Szot, K., Waser, R., Reichenberg, B., Tiedke, S.. J. Appl. Phys. 98, pp033715 (2005)Google Scholar
3. Lee, Heng-Yuan, Chen, Pang-Shiu, Wang, Ching-Chiun, Maikap, Siddheswar, Tzeng, Pei-Jer, Lin, Cha-Hsin, Lee, Lurng-Shehng, and Tsai, Ming-Jinn. Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials, Yokohama, 2006, pp.288–289 Google Scholar
4. Suu, Koukou, Miyaguchi, Yusuke, Masuda, Takeshi, Nishioka, Yutaka and Chu, Fan. TECHNICAL REPORT OF IEICE. ED2000–69, SDM2000-69 (200-06), p49-56 Google Scholar
5. Jimbo, Takehito, et al. ., Integrated Ferroelectrics, 2002, Vol. 40, pp.105–112 Google Scholar
6. Fukuda, Natsuki, et al. ., Mater. Res. Soc. Symp. Proc. Vol. 1250-G12-12, 2010 Materials Research Society Google Scholar
7. Joshua Yang, J., Zhang, M.-X., Pau Strachan, John, Miao, Feng, Pickett, Matthew D., Kelley, Ronald D., Medeiros-Ribeiro, G., and Stanley Williams, R.. Appl. Phys. Lett. 97, 232102 (2010)Google Scholar
8. Yoo, H. K., Lee, S. B., Lee, J. S., Chang, S. H., Yoon, M. J., Kim, Y. S., Kang, B. S., Lee, M.-J., Kim, C. J., Kahng, B., and Noh, T. W.. Appl. Phys. Lett. 98, 183507 (2011)Google Scholar