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Published online by Cambridge University Press: 15 February 2011
Two problems connected with the growth of Ti-silicide have been investigated. It is shown if a silicon dioxide step on a single crystal of silicon covered with titanium is annealed then, following vertical growth on the silicon part, lateral growth of Ti-silicide takes place over the oxide layer. We also studied the problems of Ti-silicide growthon samples implanted with high doses of Sb, As, P, Ar and O prior to Ti evaporation.