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Formation of Stacked Self-Assembled InAs Quantum Dots in GaAs Matrix for Laser Applications

Published online by Cambridge University Press:  10 February 2011

V. M. Ustinov ,
A. Yu. Egorov ,
A. E Zhukov ,
N. N. Ledentsov ,
M. V. Maksimov ,
A. F. Tsatsul'nikov ,
N. A. Bert ,
A. O. Kosogov ,
P. S. Kop'ev  and
D. Bimberg
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V. M. Ustinov
Affiliation:
A.F.Ioffe Physico-Tecimical Institute, Russian Academy of Sciences, Polytekhnicheskaya 26, St. Petersburg 194021, Russia, [email protected]
A. Yu. Egorov
Affiliation:
A.F.Ioffe Physico-Tecimical Institute, Russian Academy of Sciences, Polytekhnicheskaya 26, St. Petersburg 194021, Russia, [email protected]
A. E Zhukov
Affiliation:
A.F.Ioffe Physico-Tecimical Institute, Russian Academy of Sciences, Polytekhnicheskaya 26, St. Petersburg 194021, Russia, [email protected]
N. N. Ledentsov
Affiliation:
Institut ftir Festkö rperphysik, Technische Universitlität Berlin, Hardenbergstr. 36, D-10623 Berlin, Germany
M. V. Maksimov
Affiliation:
A.F.Ioffe Physico-Tecimical Institute, Russian Academy of Sciences, Polytekhnicheskaya 26, St. Petersburg 194021, Russia, [email protected]
A. F. Tsatsul'nikov
Affiliation:
A.F.Ioffe Physico-Tecimical Institute, Russian Academy of Sciences, Polytekhnicheskaya 26, St. Petersburg 194021, Russia, [email protected]
N. A. Bert
Affiliation:
A.F.Ioffe Physico-Tecimical Institute, Russian Academy of Sciences, Polytekhnicheskaya 26, St. Petersburg 194021, Russia, [email protected]
A. O. Kosogov
Affiliation:
A.F.Ioffe Physico-Tecimical Institute, Russian Academy of Sciences, Polytekhnicheskaya 26, St. Petersburg 194021, Russia, [email protected]
P. S. Kop'ev
Affiliation:
A.F.Ioffe Physico-Tecimical Institute, Russian Academy of Sciences, Polytekhnicheskaya 26, St. Petersburg 194021, Russia, [email protected]
D. Bimberg
Affiliation:
Institut ftir Festkö rperphysik, Technische Universitlität Berlin, Hardenbergstr. 36, D-10623 Berlin, Germany
Zh. I. Alferov
Affiliation:
A.F.Ioffe Physico-Tecimical Institute, Russian Academy of Sciences, Polytekhnicheskaya 26, St. Petersburg 194021, Russia, [email protected]
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Abstract

Vertically coupled InAs quantum dots have been synthesized by MBE through successive deposition of InAs dot sheets and thin GaAs spacers. The energy of ground state transition in PL spectra has been found to depend on a number of dot sheets and the spacer width. Injection laser based on vertically coupled quantum dots demonstrated lasing via the ground state of quantum dots in the entire 80K-300K temperature range. Lower threshold current density and wider range of the thermal stability of threshold current density as compared to the single sheet quantum dot laser have been observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 417: Symposium EE – Optoelectronic Materials-Ordering, Composition Modulation, and Self-Assembled … , 1995 , 141
Copyright
Copyright © Materials Research Society 1996

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