Hostname: page-component-cd9895bd7-hc48f Total loading time: 0 Render date: 2024-12-27T02:25:28.363Z Has data issue: false hasContentIssue false
  • English
  • Français

Formation of Stacked Self-Assembled InAs Quantum Dots in GaAs Matrix for Laser Applications

Published online by Cambridge University Press:  10 February 2011

V. M. Ustinov ,
A. Yu. Egorov ,
A. E Zhukov ,
N. N. Ledentsov ,
M. V. Maksimov ,
A. F. Tsatsul'nikov ,
N. A. Bert ,
A. O. Kosogov ,
P. S. Kop'ev  and
D. Bimberg
...Show all authors
V. M. Ustinov
Affiliation:
A.F.Ioffe Physico-Tecimical Institute, Russian Academy of Sciences, Polytekhnicheskaya 26, St. Petersburg 194021, Russia, [email protected]
A. Yu. Egorov
Affiliation:
A.F.Ioffe Physico-Tecimical Institute, Russian Academy of Sciences, Polytekhnicheskaya 26, St. Petersburg 194021, Russia, [email protected]
A. E Zhukov
Affiliation:
A.F.Ioffe Physico-Tecimical Institute, Russian Academy of Sciences, Polytekhnicheskaya 26, St. Petersburg 194021, Russia, [email protected]
N. N. Ledentsov
Affiliation:
Institut ftir Festkö rperphysik, Technische Universitlität Berlin, Hardenbergstr. 36, D-10623 Berlin, Germany
M. V. Maksimov
Affiliation:
A.F.Ioffe Physico-Tecimical Institute, Russian Academy of Sciences, Polytekhnicheskaya 26, St. Petersburg 194021, Russia, [email protected]
A. F. Tsatsul'nikov
Affiliation:
A.F.Ioffe Physico-Tecimical Institute, Russian Academy of Sciences, Polytekhnicheskaya 26, St. Petersburg 194021, Russia, [email protected]
N. A. Bert
Affiliation:
A.F.Ioffe Physico-Tecimical Institute, Russian Academy of Sciences, Polytekhnicheskaya 26, St. Petersburg 194021, Russia, [email protected]
A. O. Kosogov
Affiliation:
A.F.Ioffe Physico-Tecimical Institute, Russian Academy of Sciences, Polytekhnicheskaya 26, St. Petersburg 194021, Russia, [email protected]
P. S. Kop'ev
Affiliation:
A.F.Ioffe Physico-Tecimical Institute, Russian Academy of Sciences, Polytekhnicheskaya 26, St. Petersburg 194021, Russia, [email protected]
D. Bimberg
Affiliation:
Institut ftir Festkö rperphysik, Technische Universitlität Berlin, Hardenbergstr. 36, D-10623 Berlin, Germany
Zh. I. Alferov
Affiliation:
A.F.Ioffe Physico-Tecimical Institute, Russian Academy of Sciences, Polytekhnicheskaya 26, St. Petersburg 194021, Russia, [email protected]
Get access

Abstract

Vertically coupled InAs quantum dots have been synthesized by MBE through successive deposition of InAs dot sheets and thin GaAs spacers. The energy of ground state transition in PL spectra has been found to depend on a number of dot sheets and the spacer width. Injection laser based on vertically coupled quantum dots demonstrated lasing via the ground state of quantum dots in the entire 80K-300K temperature range. Lower threshold current density and wider range of the thermal stability of threshold current density as compared to the single sheet quantum dot laser have been observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 417: Symposium EE – Optoelectronic Materials-Ordering, Composition Modulation, and Self-Assembled … , 1995 , 141
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Arakawa, Y. and Sakaki, H., Appl. Phys. Lett. 40, 939 (1982).Google Scholar
2. Leonard, D., Krishnamurthy, M., Reaves, C. M., DenBaars, S. P., and Petroff, P. M., Appl. Phys. Lett. 63, 3203 (1993).Google Scholar
3. Grundmann, M., Christen, J., Ledentsov, N. N., Bohrer, J., Bimberg, D., Ruvimov, S. S., Richter, U., Werner, P., Gosele, U., Heydenreich, J., Ustinov, V. M., Egorov, A. Yu., Zhukov, A. E., Kop'ev, P. S., and Alferov, Zh. I., Phys. Rev. Lett. 74, 4043 (1995).Google Scholar
4. Ruvimov, S., Werner, P., Scheershmidt, K., Gosele, U., Heydenreich, J., Richter, U., Ledentsov, N. N., Grwmdmann, M., Binberg, D., Ustinov, V. M., Egorov, A. Yu., Kop'ev, P. S., and Alferov, Z A. I., Phys. Rev. B 51, 14766 (1995).Google Scholar
5. Ledentsov, N. N., Ustinov, V. M., Egorov, A. Yu., Zhukov, A. E., Maksimov, M. V., Tabatadze, I. G., and Kop'ev, P. S., Semiconductors 28, 832 (1994).Google Scholar
6. Kirstaedter, N., Ledentsov, N. N., Grundmann, M., Bimberg, D., Ustinov, V. M., Ruvirnov, S. S., Maksimov, M. V., Kop'ev, P. S., Alferov, Zh. I., Richter, U., Werner, P., Gosele, U., Heydenreich, J., Electron. Lett. 30, 1416 (1994).Google Scholar
7. Ledentsov, N. N., Grundmann, M., Kirstaedter, N., Schmidt, O., Heitz, R., Bohrer, J., Bimberg, D., Ustinov, V. M., Schukin, V. A., Egorov, A. Yu., Zhukov, A. E., Zaitsev, S., Kop'ev, P. S., Alferov, Zh. I., Ruvinov, S. S., Werner, P., Gosele, U., and Heydenreich, J., Proc. MSS-7, Madrid, Spain (1995), to be published.Google Scholar
8. Ledentsov, N. N., to be published.Google Scholar
9. Goldstein, L., Glas, F., Marzin, J. Y., Charasse, N. N., and Roux, G. Le, Appl. Phys. Lett. 47, 1099 (1985).Google Scholar
10. Xie, Q., Madhukar, A., Chen, P., and Kobayashi, N. P., Phys. Rev. Lett. 75, 2542 (1995).Google Scholar
1I. Petroff, P. M. and DeuBaars, S. P., Superlatt. Microstr. 15, 15 (1994).Google Scholar