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Formation of Silicon on Insulator (Soi) With Separation by Plasma Implantation of Oxygen (Spimox)

Published online by Cambridge University Press:  21 February 2011

J.B. Liu ,
S.S.K. Iyer ,
J. Min ,
P. Chu ,
R. Gronsky ,
C. Hu  and
N.W. Cheung
J.B. Liu
Affiliation:
University of California at Berkeley, Department of Material Science and Mineral Engineering, Berkeley, CA94720
S.S.K. Iyer
Affiliation:
University of California at Berkeley, Department of Electrical Engineering and Computer Sciences, Berkeley, CA94720
J. Min
Affiliation:
Department of Physics and Material Science, City Polytechnic of Hong Kong, Kowloon, Hong Kong
P. Chu
Affiliation:
Department of Physics and Material Science, City Polytechnic of Hong Kong, Kowloon, Hong Kong
R. Gronsky
Affiliation:
University of California at Berkeley, Department of Material Science and Mineral Engineering, Berkeley, CA94720
C. Hu
Affiliation:
University of California at Berkeley, Department of Electrical Engineering and Computer Sciences, Berkeley, CA94720
N.W. Cheung
Affiliation:
University of California at Berkeley, Department of Electrical Engineering and Computer Sciences, Berkeley, CA94720
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Abstract

Buried oxide layers in Si were fabricated using non-mass analyzed plasma immersion ion implantation (PHI). We call this process of making separation by implantation of oxygen (SIMOX) with implantation by PIII as separation by plasma implantation of oxygen (SPIMOX). The implantation was carried out by applying a large negative bias to a Si wafer immersed in an oxygen plasma and a nominal dose of 2 × 1017 cm”2 of oxygen was obtained in less than three minutes. Cross section transmission electron microscopy (XTEM) and Rutherford backscattering spectrometry (RBS) were used to characterize the wafers. Three distinct modes of microstructure development were observed after post implantation annealing. With a low oxygen dose (< 1 × 1017 cm”2 ), isolated silicon dioxide precipitates did not grow large enough to form a continuous oxide layer. With a high oxygen dose ( > 3 × 1017 cm”2 ), however, a single buried oxide layer was observed. By optimizing the concentration ratio of 0+ and 02+ in the plasma and the implant dose, a double oxide layer (Si/oxide/Si/oxide/Si) structure, was produced in a single implantation step.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 354: Symposium A – Beam Solid Interactions for Materials Synthesis and Characterization , 1994 , 117
Copyright
Copyright © Materials Research Society 1995

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References

1 Colinge, Jean-Pierre, Silicon-OD-Tnsnlatnr Technology: Materials to VLSI, (Kluwer Academic Publisher, Boston, 1991).Google Scholar
2 Tsuchiya, Toshiaki, Ohno, Terukazu and Kado, Yuichi, in Silicon-On-Insulator Technology and Devices, edited by Sorin Cristoloveanu (The Electrochemical Society Inc., Pennington, New Jersey, 1994) pp 401–412.Google Scholar
3 Cheung, Nathan W, Nuclear Instruments and Methods in Physics Research B 51 811 (1991).Google Scholar