Hostname: page-component-586b7cd67f-dsjbd Total loading time: 0 Render date: 2024-11-25T15:19:21.742Z Has data issue: false hasContentIssue false

Formation of Sic Films on Silicon Field Emitters

Published online by Cambridge University Press:  21 February 2011

Jiang Liu
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC
U. T. Son
Affiliation:
Agency For Defense Development, R.O., Korea
A. N. Stepanova
Affiliation:
Institute of Crystallography, Russian Academy of Sciences, Moscow, Russia
K. N. Christensen
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC
G. W. Wojak
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC
E. I. Givargizov
Affiliation:
Institute of Crystallography, Russian Academy of Sciences, Moscow, Russia
K. J. Bachmann
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC
John J. Hren
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC
Get access

Abstract

Thin films of silicon carbide have been formed on silicon field emitters by chemical reaction with ethylene (C2H4) at temperatures of 850 to 950°C using ethylene gas pressures up to 5×10-3 Torr. By controlling the reaction time and temperature, we have made SiC coatings of from ∼20 A thickness to complete transformation of tips to SiC (1-2 μm). The electron diffraction pattern of the SiC layers show the expected 20% lattice mismatch with silicon and, for those emitters completely transformed, a polycrystalline 3C-SiC polytype was identified. The small radius of curvature was maintained for both the coated and completely transformed tips, although some defects and surface roughness was introduced during the treatments.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Liu, J., Hren, J. J., Son, U. T., Jones, G. W., and Sune, C. T., Appl. Surf. Sci., 67, No.1-4, (1993).Google Scholar
[2] Silicon Carbide, edited by Marshall, R. C., Faust, J. W., and Ryan, C. E. (University of South Carolina Press, Columbia, 1974).Google Scholar
[3] Davis, R. F., The Physics and Chemistry of Carbides, Nitrides and Borides, edited by Freer, R. (Kluwer Academic, Dordrecht, The Netherlands, 1990), P. 589.Google Scholar
[4] Kim, H. J. and Davis, R. F., J. Appl. Phys., 60(8), 2897(1986).Google Scholar
[5] Golecki, I., Reidinger, F., and Marti, J., Appl. Phys. Lett., 60(14), 1703(1992).Google Scholar
[6] Motoyama, Shin-ichi and Kaneda, Shigeo, Appl. Phys. Lett., 54(3), 242(1989).Google Scholar
[7] Mogab, C. J. and Leamy, H. J., J. Appl. Phys., 45, 1075 (1974).Google Scholar
[8] Nagasawa, H. and Yamaguchi, Y., J. of Crystal Growth, 115, 612 (1991).Google Scholar
[9] Yoshinobu, Tatsuo, Mitsui, Hideaki, Tarui, Yoichiro, Fuyuki, Takashi, and Matsunami, Hiroyuki, Jpn. J. Appl. Phys., 31, L1580(1992).Google Scholar
[10] Borzyak, P. G., Givargizov, E. I., Kulishova, G. G., Lifshits, I. E., Stepanova, A. N. and Yatsenko, A.F.. Bull. Acad. Sci. USSR, 40, No. 8, 16(1976).Google Scholar