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Formation of Palladium Silicide and Germanide in the Pd/a-Si/Si., Pd/a-Ge/Si, and Pd/a-GeSi/Si Systems During Thermal Treatment

Published online by Cambridge University Press:  26 February 2011

F. Edelman ,
C. Cytermann ,
R. Brener ,
M. Eizenberg ,
R. Weil  and
W. Beyer
F. Edelman
Affiliation:
Technion-Israel Institute of Technology, Haifa 32000, Israel
C. Cytermann
Affiliation:
Technion-Israel Institute of Technology, Haifa 32000, Israel
R. Brener
Affiliation:
Technion-Israel Institute of Technology, Haifa 32000, Israel
M. Eizenberg
Affiliation:
Technion-Israel Institute of Technology, Haifa 32000, Israel
R. Weil
Affiliation:
Technion-Israel Institute of Technology, Haifa 32000, Israel
W. Beyer
Affiliation:
Institut fur Schicht- und Ionentechnik, KFA Juelich, Germany
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Abstract

X-ray diffraction and transmission electron microscopy have been used to study the kinetics of phase transformations and the structure of Pd/a-Si, Pd/a-Ge and Pd/a-GeSi thin films deposited on Si substrates. Different kinds of amorphouis structures were used: a-Si:H:D, a-Si.:F, a-Ge:H:D, and a-GeSi:H:D. The first stage of phase transformation during heat treatment was palladium silicide (Pd2Si) and palladium germanide (Pd2Ge) formation at temperatures above 200°C. Annealing studies demonstrated that the presence of F in a-Si promotes the Pd2Si formation. The study of the Pd2Si crystallization process showed that: a) when the Pd layer and the a-Si layer are thin, then c-PdSi grows in a fractal-]ike form; b) when the Pd and a-Si both are thick, then c-Pd2Si grows in a globular structure; c) in both above mentioned cases a well-oriented [0011 texture forms. The growth of the silicide and germanide layers in the temperature range of 200-300°C was found to be controlled by a diffusion limited process. It was found that c-Pd2Ge transforms to c-PdGe above 200°C. The a-Ge,.,Si,. 5 alloy behaved similarly to a-Si forming only [001] textured c-Pd2(Ge,Si).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 205: Symposium F – Kinetics of Phase Transformations , 1990 , 281
Copyright
Copyright © Materials Research Society 1992

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