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Formation of Nickel Silicides on Ion-Amorphized Silicon

Published online by Cambridge University Press:  25 February 2011

B. Mohadjeri ,
J. Linnros ,
B. G. Svensson ,
M. ÖStling ,
S. Johanssons  and
F. M. D'Heurle
B. Mohadjeri
Affiliation:
Royal Institute of Technology, Solid State Electronics, P.O. Box 1298, S-164 28 Kista-Stockholm, SWEDEN
J. Linnros
Affiliation:
Swedish Institute of Microelectronics, P. O. Box 1084, S-164 21 Kista-Stockholm, SWEDEN
B. G. Svensson
Affiliation:
Royal Institute of Technology, Solid State Electronics, P.O. Box 1298, S-164 28 Kista-Stockholm, SWEDEN
M. ÖStling
Affiliation:
Royal Institute of Technology, Solid State Electronics, P.O. Box 1298, S-164 28 Kista-Stockholm, SWEDEN
S. Johanssons
Affiliation:
Uppsala University, Materials Science Division, P.O. Box 534, S-751 21 Uppsala, SWEDEN
F. M. D'Heurle
Affiliation:
Royal Institute of Technology, Solid State Electronics, P.O. Box 1298, S-164 28 Kista-Stockholm, SWEDEN IBM Research Center, PO 218, Yorktown Heights, NY 10598, USA
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Abstract

The formation of NiSi and NiSi2 upon annealing of an ion-amorphized Ni/Si structure has been studied by various surface analytical techniques to characterize the morphology, stoichiometry and interface sharpness of the NiSi2 layer. In comparison with reactions of nickel on crystalline silicon (c-Si), sharpening 0ofthe NiSi2/C-Si interface is obtained for appropriate amorphization depths. Moreover, the surface roughness of the NiSi2 films is significantly reduced by implantation. The NiSi2 formation temperature is, however, not reduced as observed for structures with nickel deposited on amorphous silicon prepared by evaporation. This dissimilarity can be explained by an unexpected low crystallization temperature or the ion-amorphized structure, where Ni-ennanced solid phase epitaxy occurs at a temperature as low as 425°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 405
Copyright
Copyright © Materials Research Society 1992

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References

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